Inventor

UENO KATSUNORI

JP112 patents

⚠️ This page may combine multiple inventors who share the name “UENO KATSUNORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UENO KATSUNORI

FUJI ELECTRIC CO LTD

Super-junction semiconductor device

Method for manufacturing silicon carbide semiconductor device

Method of manufacturing a silicon carbide vertical MOSFET

Method of forming silicon carbide trench mosfet with a schottky electrode

Super-junction semiconductor device

Super-junction semiconductor device

Semiconductor device

Super-junction semiconductor device

Semiconductor device with alternating conductivity type layer and method of manufacturing the same

Silicon carbide vertical FET and method for manufacturing the same

Silicon carbide field effect transistor with increased avalanche withstand capability

Silicon carbide trench MOSFET

Method of manufacturing a super-junction semiconductor device with an conductivity type layer

Method for forming thermal oxide film of silicon carbide semiconductor device

Silicon carbide field effect transistor with increased avalanche withstand capability

Manufacturing method of SiC Schottky diode

Method of producing silicon carbide MOSFET

Semiconductor device

Silicon carbide n channel MOS semiconductor device and method for manufacturing the same

Silicon carbide vertical FET and method for manufacturing the same

Method for manufacturing silicon carbide semiconductor device

Method for manufacturing silicon carbide MOS semiconductor device including utilizing difference in mask edges in implanting

MOSFET controlled thyristor

Semiconductor device with MISFET-controlled thyristor

MOS semiconductor device with an inverted U-shaped gate

Super-junction semiconductor device

Power semiconductor device having an insulated gate field effect transistor and a bipolar transistor

Semiconductor device with low on-voltage and large controllable turn-off current

Silicon carbide vertical MOSFET and method for manufacturing the same

Insulated-gate controlled semiconductor device

Two-gate semiconductor power switching device

Semiconductor device and a method for the manufacture thereof

Method for fabricating an insulated gate control thyristor

Bipolar static induction transistor

Insulated gate control thyristor

Semiconductor device

FUJI ELEC DEVICE TECH CO LTD

Semiconductor device

Insulated gate silicon carbide semiconductor device

Super-junction semiconductor device and method of manufacturing the same

Super-junction semiconductor device and method of manufacturing the same

FUJI ELECTRIC SYSTEMS CO LTD

Insulating transformer and power conversion device

Manufacturing method for micro-transformers

Insulated gate silicon carbide semiconductor device and method for manufacturing the same

FUJI ELECTRIC HOLDINGS

Semiconductor superjunction device

Insulated gate bipolar transistor

FUJI ELECTRIC CO LTDS

Semiconductor device

FUJI ELETRIC CO LTD

Method for forming thermal oxide film of silicon carbide semiconductor device

SHINETSU HANDOTAI KK

Fabrication method of semiconductor wafer

YOSHIMURA HIROYUKI

Insulated transformers, and power converting device

TOKYO ELECTRON LTD

Operational control device, operational control method, program and storage medium thereof, for a plurality of power consumption systems