Inventor
KO CHUN-YAO
TW38 patents
⚠️ This page may combine multiple inventors who share the name “KO CHUN-YAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS9384815B2Jul 5, 2016
Mechanisms for preventing leakage currents in memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9620594B2Apr 11, 2017
Memory device, memory cell and memory cell layout
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US11844213B2Dec 12, 2023
Non-volatile memory (NVM) cell structure to increase reliability
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11387242B2Jul 12, 2022
Non-volatile memory (NVM) cell structure to increase reliability
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11152383B2Oct 19, 2021
Non-volatile memory (NVM) cell structure to increase reliability
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9537016B1Jan 3, 2017
Memory device, gate stack and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9257522B2Feb 9, 2016
Memory architectures having dense layouts
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12477726B2Nov 18, 2025
Memory device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342538B2Jun 24, 2025
Non-volatile memory (NVM) cell structure to increase reliability
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11367731B2Jun 21, 2022
Memory device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10163920B2Dec 25, 2018
Memory device and memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10784276B2Sep 22, 2020
Non-volatile memory and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141323B2Nov 27, 2018
Non-volatile memory and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9837458B2Dec 5, 2017
Crosstalk improvement through P on N structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711516B2Jul 18, 2017
Non-volatile memory having a gate-layered triple well structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9496302B2Nov 15, 2016
Crosstalk improvement through P on N structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10553597B2Feb 4, 2020
Memory cell including a plurality of wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10727222B2Jul 28, 2020
Memory system and memory cell having dense layouts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
9 patentsUS7388187B1Jun 17, 2008
Cross-talk reduction through deep pixel well implant for image sensors
TAIWAN SEMICONDUCTOR MFG29 citations92
US8368130B2Feb 5, 2013
Method and device to reduce dark current in image sensors
TAIWAN SEMICONDUCTOR MFG6 citations84
US7732844B2Jun 8, 2010
Crosstalk improvement through P on N structure for image sensor
TAIWAN SEMICONDUCTOR MFG5 citations74
US7879639B2Feb 1, 2011
Method and device to reduce dark current in image sensors
TAIWAN SEMICONDUCTOR MFG3 citations63
US9373627B2Jun 21, 2016
Multiple-time programming memory cells and methods for forming the same
TAIWAN SEMICONDUCTOR MFG2 citations61
US9159741B2Oct 13, 2015
Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency
TAIWAN SEMICONDUCTOR MFG0 citations51
US8853079B2Oct 7, 2014
Fuse device
TAIWAN SEMICONDUCTOR MFG0 citations51
US8952442B2Feb 10, 2015
Multiple-time programming memory cells and methods for forming the same
TAIWAN SEMICONDUCTOR MFG0 citations50
US8962439B2Feb 24, 2015
Memory cell
TAIWAN SEMICONDUCTOR MFG0 citations41
KO PO CHENG
4 patentsUS12360177B2Jul 15, 2025
Interactive test equipment for quality evaluation of power transformer
KO PO CHENG0 citations43
US12298339B2May 13, 2025
Interactive test equipment for quality evaluation of insulative electric resistance value of electric power cable
KO PO CHENG0 citations43
US12092700B2Sep 17, 2024
Interactive test equipment for quality evaluation of resistance value test for electric leakage
KO PO CHENG0 citations43
US11502462B1Nov 15, 2022
Extension cord for polyphase voltage conversion
KO PO CHENG0 citations43