P

Inventor

KO CHUN-YAO

TW38 patents
⚠️ This page may combine multiple inventors who share the name “KO CHUN-YAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

18 patents
US9384815B2Jul 5, 2016

Mechanisms for preventing leakage currents in memory cells

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9620594B2Apr 11, 2017

Memory device, memory cell and memory cell layout

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US11844213B2Dec 12, 2023

Non-volatile memory (NVM) cell structure to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11387242B2Jul 12, 2022

Non-volatile memory (NVM) cell structure to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11152383B2Oct 19, 2021

Non-volatile memory (NVM) cell structure to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9537016B1Jan 3, 2017

Memory device, gate stack and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9257522B2Feb 9, 2016

Memory architectures having dense layouts

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12477726B2Nov 18, 2025

Memory device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342538B2Jun 24, 2025

Non-volatile memory (NVM) cell structure to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11367731B2Jun 21, 2022

Memory device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10163920B2Dec 25, 2018

Memory device and memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10784276B2Sep 22, 2020

Non-volatile memory and method of manufacturing same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141323B2Nov 27, 2018

Non-volatile memory and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9837458B2Dec 5, 2017

Crosstalk improvement through P on N structure for image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711516B2Jul 18, 2017

Non-volatile memory having a gate-layered triple well structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9496302B2Nov 15, 2016

Crosstalk improvement through P on N structure for image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10553597B2Feb 4, 2020

Memory cell including a plurality of wells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10727222B2Jul 28, 2020

Memory system and memory cell having dense layouts

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42

TAIWAN SEMICONDUCTOR MFG

9 patents

KO PO CHENG

4 patents

LIANG VICTOR CHIANG

1 patent

LIANG VICTOR-CHIANG

1 patent

FU CHING-HUNG

1 patent

LIAO TA-CHUAN

1 patent

LU HAU-YAN

1 patent

CHANG CHUNG-WEI

1 patent

LIN JYUN-YING

1 patent