Inventor
FAN WEI-HAN
TW28 patents
⚠️ This page may combine multiple inventors who share the name “FAN WEI-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS10446669B2Oct 15, 2019
Source and drain surface treatment for multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12382703B2Aug 5, 2025
Spacer features for nanosheet-based devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12363988B2Jul 15, 2025
Inner spacer features for multi-gate transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12457770B2Oct 28, 2025
Source and drain engineering process for multigate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302615B2May 13, 2025
Epitaxial structures exposed in airgaps for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191369B2Jan 7, 2025
Source and drain engineering process for multigate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923409B2Mar 5, 2024
Epitaxial structures exposed in airgaps for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11955547B2Apr 9, 2024
Semiconductor device including an epitaxy region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10868149B2Dec 15, 2020
Source and drain surface treatment for multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9698057B2Jul 4, 2017
Method of manufacturing strained source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12142647B2Nov 12, 2024
Self-aligning backside contact process and devices thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12520555B2Jan 6, 2026
Inner spacer for a multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12402364B2Aug 26, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12051732B2Jul 30, 2024
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10164093B2Dec 25, 2018
Semiconductor device including an epitaxy region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
TAIWAN SEMICONDUCTOR MFG
6 patentsUS9111906B2Aug 18, 2015
Method for fabricating semiconductor device having spacer elements
TAIWAN SEMICONDUCTOR MFG7 citations83
US9048253B2Jun 2, 2015
Method of manufacturing strained source/drain structures
TAIWAN SEMICONDUCTOR MFG2 citations63
US8368147B2Feb 5, 2013
Strained semiconductor device with recessed channel
TAIWAN SEMICONDUCTOR MFG3 citations63
US9153655B2Oct 6, 2015
Spacer elements for semiconductor device
TAIWAN SEMICONDUCTOR MFG2 citations62
US8735988B2May 27, 2014
Semiconductor device having a first spacer element and an adjacent second spacer element
TAIWAN SEMICONDUCTOR MFG1 citations62
US9293537B2Mar 22, 2016
High performance strained source-drain structure and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations52