Inventor

LU TSENG-FU

TW35 patents

⚠️ This page may combine multiple inventors who share the name “LU TSENG-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LU TSENG-FU

NANYA TECHNOLOGY CORP

Semiconductor structure having buried gate electrode with protruding member and method of manufacturing the same

Method for preparing transistor device

Semiconductor structure with buried power line and buried signal line and method for manufacturing the same

Semiconductor structure and method for preparing the same

Memory structure with non-straight word line

Semiconductor structure having active regions with different dopant concentrations

Semiconductor device with negative capacitance material in buried channel

Semiconductor structure for electrostatic discharge protection

Semiconductor electrostatic discharge protection device

Semiconductor structure

Method of fabricating semiconductor structure

Method of manufacturing semiconductor device having reduced contact resistance between access transistors and conductive features

Method for preparing semiconductor device with T-shaped buried gate electrode

Method for manufacturing semiconductor structure with buried power line and buried signal line

Method for preparing semiconductor structure having buried gate electrode with protruding member

Semiconductor structure and fabrication method thereof

Method of forming semiconductor structure

Semiconductor device having reduced contact resistance between access transistors and conductive features and method of manufacturing the same

Semiconductor device with T-shaped buried gate electrode and method for forming the same

Transistor device and method for preparing the same

Semiconductor layout structure including asymmetrical channel region

Transistor device and semiconductor layout structure including asymmetrical channel region

Semiconductor device with undercutted-gate and method of fabricating the same

Diode structure and electrostatic discharge protection device including the same

Memory with a contact between a data storage device and a data processing device

Memory structure and method of forming thereof

Method for manufacturing a semiconductor memory

Semiconductor device with undercutted-gate and method of fabricating the same

Transistor structure and semiconductor layout structure

IC package having a metal die for ESP protection

Off chip driver structure

Semiconductor electrostatic discharge protection device

Memory structure and method of forming thereof

Semiconductor device having a shielding line for signal crosstalk suppression

LAI CHAO-SUNG

Surface treatment method by using the NH3 plasma treatment to modify the sensing thin-film