Inventor

PERNG TSU-HSIU

TW33 patents

⚠️ This page may combine multiple inventors who share the name “PERNG TSU-HSIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PERNG TSU-HSIU

TAIWAN SEMICONDUCTOR MFG CO LTD

Inner spacers for gate-all-around semiconductor devices

Methods of cutting metal gates and structures formed thereof

Methods of cutting metal gates and structures formed thereof

Methods of cutting metal gates and structures formed thereof

Methods of cutting metal gates and structures formed thereof

Dummy fin structures and methods of forming same

Method of manufacturing a fin-like field effect transistor (FinFET) device

Inner spacers for gate-all-around semiconductor devices

Dummy fin structures and methods of forming same

Dummy fin structures and methods of forming same

Method of semiconductor integrated circuit fabrication

Combination FinFET and methods of forming same

Semiconductor device having fully oxidized gate oxide layer and method for making the same

Methods of cutting metal gates and structures formed thereof

Inner spacers for gate-all-around semiconductor devices

Dummy fin structures and methods of forming same

Air spacer formation with a spin-on dielectric material

Semiconductor device having fully oxidized gate oxide layer and method for making the same

Air spacer formation with a spin-on dielectric material

FinFET structure and device

Method of forming high voltage transistor and structure resulting therefrom

Interconnect structure and method for manufacturing the interconnect structure

Interconnect structure and method for manufacturing the interconnect structure

Interconnect structure and method for manufacturing the interconnect structure

Method of semiconductor integrated circuit fabrication

FinFET cut-last process using oxide trench fill

FinFETs and methods for forming the same

Metal gate finFET device

TAIWAN SEMICONDUCTOR MFG

FinFETs and methods for forming the same

FinFETs and methods for forming the same

Method of fabricating a semiconductor device having a capping layer

PERNG TSU-HSIU

Fin-like field effect transistor (FinFET) device and method of manufacturing same

YANG YU-LIN

Metal gate finFET device and method of fabricating thereof