Inventor
PETTI CHRISTOPHER J
US120 patents
⚠️ This page may combine multiple inventors who share the name “PETTI CHRISTOPHER J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
26 patentsUS7812404B2Oct 12, 2010
Nonvolatile memory cell comprising a diode and a resistance-switching material
SANDISK 3D LLC55 citations98
US7745312B2Jun 29, 2010
Selective germanium deposition for pillar devices
SANDISK 3D LLC89 citations98
US7499355B2Mar 3, 2009
High bandwidth one time field-programmable memory
SANDISK 3D LLC71 citations98
US7474000B2Jan 6, 2009
High density contact to relaxed geometry layers
SANDISK 3D LLC141 citations98
US7463546B2Dec 9, 2008
Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders
SANDISK 3D LLC71 citations98
US7706177B2Apr 27, 2010
Method of programming cross-point diode memory array
SANDISK 3D LLC51 citations94
USRE46435EJun 13, 2017
Three dimensional hexagonal matrix memory array
SANDISK 3D LLC14 citations93
US9443910B1Sep 13, 2016
Silicided bit line for reversible-resistivity memory
SANDISK 3D LLC28 citations93
US7746680B2Jun 29, 2010
Three dimensional hexagonal matrix memory array
SANDISK 3D LLC33 citations93
US7554832B2Jun 30, 2009
Passive element memory array incorporating reversible polarity word line and bit line decoders
SANDISK 3D LLC21 citations93
US7553611B2Jun 30, 2009
Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
SANDISK 3D LLC21 citations93
US7521353B2Apr 21, 2009
Method for reducing dielectric overetch when making contact to conductive features
SANDISK 3D LLC16 citations93
US7486537B2Feb 3, 2009
Method for using a mixed-use memory array with different data states
SANDISK 3D LLC35 citations93
US7272052B2Sep 18, 2007
Decoding circuit for non-binary groups of memory line drivers
SANDISK 3D LLC33 citations93
US7101764B2Sep 5, 2006
High-voltage transistor and fabrication process
SANDISK 3D LLC20 citations93
US7786015B2Aug 31, 2010
Method for fabricating self-aligned complementary pillar structures and wiring
SANDISK 3D LLC29 citations92
US7422985B2Sep 9, 2008
Method for reducing dielectric overetch using a dielectric etch stop at a planar surface
SANDISK 3D LLC16 citations92
US9627009B2Apr 18, 2017
Interleaved grouped word lines for three dimensional non-volatile storage
SANDISK 3D LLC7 citations84
US9099385B2Aug 4, 2015
Vertical 1T-1R memory cells, memory arrays and methods of forming the same
SANDISK 3D LLC11 citations84
US8008187B2Aug 30, 2011
Method for reducing dielectric overetch using a dielectric etch stop at a planar surface
SANDISK 3D LLC7 citations84
US7928007B2Apr 19, 2011
Method for reducing dielectric overetch when making contact to conductive features
SANDISK 3D LLC9 citations84
US7855119B2Dec 21, 2010
Method for forming polycrystalline thin film bipolar transistors
SANDISK 3D LLC12 citations84
US7800933B2Sep 21, 2010
Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
SANDISK 3D LLC19 citations84
US7800934B2Sep 21, 2010
Programming methods to increase window for reverse write 3D cell
SANDISK 3D LLC11 citations84
US7759201B2Jul 20, 2010
Method for fabricating pitch-doubling pillar structures
SANDISK 3D LLC8 citations84
US7570523B2Aug 4, 2009
Method for using two data busses for memory array block selection
SANDISK 3D LLC9 citations84
SANDISK TECHNOLOGIES LLC
10 patentsUS10381559B1Aug 13, 2019
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
SANDISK TECHNOLOGIES LLC46 citations94
US10381409B1Aug 13, 2019
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
SANDISK TECHNOLOGIES LLC35 citations94
US10262730B1Apr 16, 2019
Multi-state and confined phase change memory with vertical cross-point structure
SANDISK TECHNOLOGIES LLC25 citations94
US10038092B1Jul 31, 2018
Three-level ferroelectric memory cell using band alignment engineering
SANDISK TECHNOLOGIES LLC53 citations94
US9859337B2Jan 2, 2018
Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof
SANDISK TECHNOLOGIES LLC22 citations94
US9818801B1Nov 14, 2017
Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
SANDISK TECHNOLOGIES LLC24 citations94
US10453531B1Oct 22, 2019
Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same
SANDISK TECHNOLOGIES LLC17 citations86
US10957680B2Mar 23, 2021
Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same
SANDISK TECHNOLOGIES LLC18 citations85
US10374014B2Aug 6, 2019
Multi-state phase change memory device with vertical cross-point structure
SANDISK TECHNOLOGIES LLC4 citations84
US9754665B2Sep 5, 2017
Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
SANDISK TECHNOLOGIES LLC18 citations84
MATRIX SEMICONDUCTOR INC
7 patentsUS6946719B2Sep 20, 2005
Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
MATRIX SEMICONDUCTOR INC288 citations99
US6888750B2May 3, 2005
Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
MATRIX SEMICONDUCTOR INC497 citations99
US6881994B2Apr 19, 2005
Monolithic three dimensional array of charge storage devices containing a planarized surface
MATRIX SEMICONDUCTOR INC515 citations99
US6815781B2Nov 9, 2004
Inverted staggered thin film transistor with salicided source/drain structures and method of making same
MATRIX SEMICONDUCTOR INC309 citations99
US7054219B1May 30, 2006
Transistor layout configuration for tight-pitched memory array lines
MATRIX SEMICONDUCTOR INC91 citations98
US6992349B2Jan 31, 2006
Rail stack array of charge storage devices and method of making same
MATRIX SEMICONDUCTOR INC117 citations98
US6501139B1Dec 31, 2002
High-voltage transistor and fabrication process
MATRIX SEMICONDUCTOR INC31 citations93
CYPRESS SEMICONDUCTOR CORP
2 patentsUS6066555AMay 23, 2000
Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning
CYPRESS SEMICONDUCTOR CORP30 citations92
US5523258AJun 4, 1996
Method for avoiding lithographic rounding effects for semiconductor fabrication
CYPRESS SEMICONDUCTOR CORP39 citations89
GTAT CORP
2 patentsSCHEUERLEIN ROY E
1 patentSIVARAM SRINIVASAN
1 patentHSIA KANG-JAY
1 patentShowing the top 50 of 120 patents by PatentIndex Score.