P

Inventor

PETTI CHRISTOPHER J

US120 patents
⚠️ This page may combine multiple inventors who share the name “PETTI CHRISTOPHER J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK 3D LLC

26 patents
US7812404B2Oct 12, 2010

Nonvolatile memory cell comprising a diode and a resistance-switching material

SANDISK 3D LLC55 citations98
US7745312B2Jun 29, 2010

Selective germanium deposition for pillar devices

SANDISK 3D LLC89 citations98
US7499355B2Mar 3, 2009

High bandwidth one time field-programmable memory

SANDISK 3D LLC71 citations98
US7474000B2Jan 6, 2009

High density contact to relaxed geometry layers

SANDISK 3D LLC141 citations98
US7463546B2Dec 9, 2008

Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders

SANDISK 3D LLC71 citations98
US7706177B2Apr 27, 2010

Method of programming cross-point diode memory array

SANDISK 3D LLC51 citations94
USRE46435EJun 13, 2017

Three dimensional hexagonal matrix memory array

SANDISK 3D LLC14 citations93
US9443910B1Sep 13, 2016

Silicided bit line for reversible-resistivity memory

SANDISK 3D LLC28 citations93
US7746680B2Jun 29, 2010

Three dimensional hexagonal matrix memory array

SANDISK 3D LLC33 citations93
US7554832B2Jun 30, 2009

Passive element memory array incorporating reversible polarity word line and bit line decoders

SANDISK 3D LLC21 citations93
US7553611B2Jun 30, 2009

Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure

SANDISK 3D LLC21 citations93
US7521353B2Apr 21, 2009

Method for reducing dielectric overetch when making contact to conductive features

SANDISK 3D LLC16 citations93
US7486537B2Feb 3, 2009

Method for using a mixed-use memory array with different data states

SANDISK 3D LLC35 citations93
US7272052B2Sep 18, 2007

Decoding circuit for non-binary groups of memory line drivers

SANDISK 3D LLC33 citations93
US7101764B2Sep 5, 2006

High-voltage transistor and fabrication process

SANDISK 3D LLC20 citations93
US7786015B2Aug 31, 2010

Method for fabricating self-aligned complementary pillar structures and wiring

SANDISK 3D LLC29 citations92
US7422985B2Sep 9, 2008

Method for reducing dielectric overetch using a dielectric etch stop at a planar surface

SANDISK 3D LLC16 citations92
US9627009B2Apr 18, 2017

Interleaved grouped word lines for three dimensional non-volatile storage

SANDISK 3D LLC7 citations84
US9099385B2Aug 4, 2015

Vertical 1T-1R memory cells, memory arrays and methods of forming the same

SANDISK 3D LLC11 citations84
US8008187B2Aug 30, 2011

Method for reducing dielectric overetch using a dielectric etch stop at a planar surface

SANDISK 3D LLC7 citations84
US7928007B2Apr 19, 2011

Method for reducing dielectric overetch when making contact to conductive features

SANDISK 3D LLC9 citations84
US7855119B2Dec 21, 2010

Method for forming polycrystalline thin film bipolar transistors

SANDISK 3D LLC12 citations84
US7800933B2Sep 21, 2010

Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance

SANDISK 3D LLC19 citations84
US7800934B2Sep 21, 2010

Programming methods to increase window for reverse write 3D cell

SANDISK 3D LLC11 citations84
US7759201B2Jul 20, 2010

Method for fabricating pitch-doubling pillar structures

SANDISK 3D LLC8 citations84
US7570523B2Aug 4, 2009

Method for using two data busses for memory array block selection

SANDISK 3D LLC9 citations84

SANDISK TECHNOLOGIES LLC

10 patents
US10381559B1Aug 13, 2019

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

SANDISK TECHNOLOGIES LLC46 citations94
US10381409B1Aug 13, 2019

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

SANDISK TECHNOLOGIES LLC35 citations94
US10262730B1Apr 16, 2019

Multi-state and confined phase change memory with vertical cross-point structure

SANDISK TECHNOLOGIES LLC25 citations94
US10038092B1Jul 31, 2018

Three-level ferroelectric memory cell using band alignment engineering

SANDISK TECHNOLOGIES LLC53 citations94
US9859337B2Jan 2, 2018

Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof

SANDISK TECHNOLOGIES LLC22 citations94
US9818801B1Nov 14, 2017

Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof

SANDISK TECHNOLOGIES LLC24 citations94
US10453531B1Oct 22, 2019

Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same

SANDISK TECHNOLOGIES LLC17 citations86
US10957680B2Mar 23, 2021

Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same

SANDISK TECHNOLOGIES LLC18 citations85
US10374014B2Aug 6, 2019

Multi-state phase change memory device with vertical cross-point structure

SANDISK TECHNOLOGIES LLC4 citations84
US9754665B2Sep 5, 2017

Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer

SANDISK TECHNOLOGIES LLC18 citations84

MATRIX SEMICONDUCTOR INC

7 patents

CYPRESS SEMICONDUCTOR CORP

2 patents

GTAT CORP

2 patents

SCHEUERLEIN ROY E

1 patent

SIVARAM SRINIVASAN

1 patent

HSIA KANG-JAY

1 patent

Showing the top 50 of 120 patents by PatentIndex Score.