P

Inventor

BITO YASUNORI

JP10 patents
⚠️ This page may combine multiple inventors who share the name “BITO YASUNORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BITO YASUNORI

4 patents
US8587027B2Nov 19, 2013

Field effect transistor, method of manufacturing the same, and semiconductor device

BITO YASUNORI4 citations60
US8421120B2Apr 16, 2013

Field effect transistor capable of reducing shift of threshold voltage

BITO YASUNORI2 citations60
US8253218B2Aug 28, 2012

Protective element and semiconductor device

BITO YASUNORI4 citations60
US8067788B2Nov 29, 2011

Semiconductor device

BITO YASUNORI3 citations60

NEC CORP

2 patents
US6025613AFeb 15, 2000

Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same

NEC CORP25 citations91
US6624440B2Sep 23, 2003

Field effect transistor

NEC CORP7 citations72

NEC ELECTRONICS CORP

2 patents
US7456444B2Nov 25, 2008

Field effect transistor

NEC ELECTRONICS CORP10 citations82
US7071499B2Jul 4, 2006

Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing method

NEC ELECTRONICS CORP4 citations61

AOIKE MASAYUKI

1 patent
US8299499B2Oct 30, 2012

Field effect transistor

AOIKE MASAYUKI4 citations55

YOSHINAGA YASUYUKI

1 patent
US8217424B2Jul 10, 2012

Semiconductor device having stacked InGaP and GaAs layers, and method of making same

YOSHINAGA YASUYUKI2 citations51