Inventor
KANG SANG-GU
KR33 patents
⚠️ This page may combine multiple inventors who share the name “KANG SANG-GU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS7518920B2Apr 14, 2009
Flash memory device including a dummy cell
SAMSUNG ELECTRONICS CO LTD67 citations98
US7548457B2Jun 16, 2009
Multi-bit nonvolatile memory device and related programming method
SAMSUNG ELECTRONICS CO LTD33 citations93
US8358544B2Jan 22, 2013
Flash memory device having dummy cell
SAMSUNG ELECTRONICS CO LTD12 citations92
US8054692B2Nov 8, 2011
Flash memory device reducing noise of common source line, program verify method thereof, and memory system including the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US7746719B2Jun 29, 2010
Multi-chip package reducing power-up peak current
SAMSUNG ELECTRONICS CO LTD20 citations92
US7652926B2Jan 26, 2010
Nonvolatile semiconductor memory device including a cell string with dummy cells
SAMSUNG ELECTRONICS CO LTD32 citations92
US7561467B2Jul 14, 2009
Flash memory device using program data cache and programming method thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US8023323B2Sep 20, 2011
Non-volatile memory device having monitoring memory cell and related method of driving using variable read voltage
SAMSUNG ELECTRONICS CO LTD17 citations84
US7965557B2Jun 21, 2011
Flash memory device and set-up data initialization method
SAMSUNG ELECTRONICS CO LTD8 citations84
US7688640B2Mar 30, 2010
Flash memory device and method for driving the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7539063B2May 26, 2009
Flash memory devices and programming methods for the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7978522B2Jul 12, 2011
Flash memory device including a dummy cell
SAMSUNG ELECTRONICS CO LTD6 citations74
USRE46238EDec 13, 2016
Semiconductor memory device and related method of programming
SAMSUNG ELECTRONICS CO LTD2 citations63
US7826269B2Nov 2, 2010
Flash memory device and method for driving the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7796441B2Sep 14, 2010
Method of reading configuration data in flash memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US7734880B2Jun 8, 2010
Flash memory system compensating reduction in read margin between memory cell program states
SAMSUNG ELECTRONICS CO LTD6 citations63
US7362612B2Apr 22, 2008
Program method for flash memory capable of compensating for the reduction of read margin between states
SAMSUNG ELECTRONICS CO LTD4 citations63
US7701235B2Apr 20, 2010
Substrate test probing equipment having forcing part for test head and force-receiving pattern for probe card and methods of using the same
SAMSUNG ELECTRONICS CO LTD0 citations39
KANG SANG-GU
7 patentsUS8395943B2Mar 12, 2013
Flash memory device and set-up data initialization method
KANG SANG-GU5 citations84
US8243530B2Aug 14, 2012
Non-volatile memory device
KANG SANG-GU9 citations84
US8068361B2Nov 29, 2011
Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations
KANG SANG-GU9 citations84
US8154929B2Apr 10, 2012
Flash memory device controlling common source line voltage, program-verify method, and memory system
KANG SANG-GU6 citations73
US8520434B2Aug 27, 2013
Method of storing E-fuse data in flash memory device
KANG SANG-GU3 citations63
US8179732B2May 15, 2012
Flash memory devices including ready/busy control circuits and methods of testing the same
KANG SANG-GU5 citations62
US8149620B2Apr 3, 2012
Flash memory device having dummy cell
KANG SANG-GU3 citations62
KANG SANG GU
3 patentsUS8493784B2Jul 23, 2013
Semiconductor memory device and related method of programming
KANG SANG GU5 citations84
US8120967B2Feb 21, 2012
Semiconductor memory device and related method of programming
KANG SANG GU8 citations84
US8279680B2Oct 2, 2012
Semiconductor memory device and related method of programming
KANG SANG GU1 citations62