Inventor
LEE TZYH-CHEANG
TW35 patents
⚠️ This page may combine multiple inventors who share the name “LEE TZYH-CHEANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
21 patentsUS7176084B2Feb 13, 2007
Self-aligned conductive spacer process for sidewall control gate of high-speed random access memory
TAIWAN SEMICONDUCTOR MFG66 citations98
US6436787B1Aug 20, 2002
Method of forming crown-type MIM capacitor integrated with the CU damascene process
TAIWAN SEMICONDUCTOR MFG75 citations96
US6559493B2May 6, 2003
High density stacked mim capacitor structure
TAIWAN SEMICONDUCTOR MFG30 citations93
US6426250B1Jul 30, 2002
High density stacked MIM capacitor structure
TAIWAN SEMICONDUCTOR MFG35 citations93
US7893420B2Feb 22, 2011
Phase change memory with various grain sizes
TAIWAN SEMICONDUCTOR MFG13 citations92
US7579612B2Aug 25, 2009
Resistive memory device having enhanced resist ratio and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG34 citations92
US7482236B2Jan 27, 2009
Structure and method for a sidewall SONOS memory device
TAIWAN SEMICONDUCTOR MFG39 citations92
US7573095B2Aug 11, 2009
Memory cells with improved program/erase windows
TAIWAN SEMICONDUCTOR MFG9 citations84
US7705424B2Apr 27, 2010
Phase change memory
TAIWAN SEMICONDUCTOR MFG13 citations80
US9190610B2Nov 17, 2015
Methods of forming phase change memory with various grain sizes
TAIWAN SEMICONDUCTOR MFG4 citations73
US7714376B2May 11, 2010
Non-volatile memory device with polysilicon spacer and method of forming the same
TAIWAN SEMICONDUCTOR MFG3 citations63
US7663134B2Feb 16, 2010
Memory array with a selector connected to multiple resistive cells
TAIWAN SEMICONDUCTOR MFG4 citations63
US7538384B2May 26, 2009
Non-volatile memory array structure
TAIWAN SEMICONDUCTOR MFG3 citations63
US7482231B2Jan 27, 2009
Manufacturing of memory array and periphery
TAIWAN SEMICONDUCTOR MFG5 citations63
US7405119B2Jul 29, 2008
Structure and method for a sidewall SONOS memory device
TAIWAN SEMICONDUCTOR MFG3 citations63
US7989920B2Aug 2, 2011
Phase change memory
TAIWAN SEMICONDUCTOR MFG4 citations59
US7541639B2Jun 2, 2009
Memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US7355236B2Apr 8, 2008
Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG0 citations52
US7847335B2Dec 7, 2010
Non-volatile memory device having a generally L-shaped cross-section sidewall SONOS
TAIWAN SEMICONDUCTOR MFG0 citations42
US7732310B2Jun 8, 2010
Sidewall memory with self-aligned asymmetrical source and drain configuration
TAIWAN SEMICONDUCTOR MFG0 citations42
US7642170B2Jan 5, 2010
Phase change memory cell with roundless micro-trenches
TAIWAN SEMICONDUCTOR MFG0 citations42
UNITED MICROELECTRONICS CORP
6 patentsUS6878988B1Apr 12, 2005
Non-volatile memory with induced bit lines
UNITED MICROELECTRONICS CORP41 citations91
US7485533B2Feb 3, 2009
Fabrication method of an non-volatile memory
UNITED MICROELECTRONICS CORP6 citations63
US7193265B2Mar 20, 2007
Single-poly EEPROM
UNITED MICROELECTRONICS CORP4 citations62
US7488645B2Feb 10, 2009
Method of fabricating a non-volatile memory
UNITED MICROELECTRONICS CORP1 citations52
US7485919B2Feb 3, 2009
Non-volatile memory
UNITED MICROELECTRONICS CORP0 citations52
US7075830B2Jul 11, 2006
Method for programming single-bit storage SONOS type memory
UNITED MICROELECTRONICS CORP1 citations49
LEE TZYH-CHEANG
5 patentsUS8154003B2Apr 10, 2012
Resistive non-volatile memory device
LEE TZYH-CHEANG9 citations82
US9006826B2Apr 14, 2015
Butted contact shape to improve SRAM leakage current
LEE TZYH-CHEANG3 citations61
US9112144B2Aug 18, 2015
Method of fabricating a resistive non-volatile memory device
LEE TZYH-CHEANG2 citations60
US8173990B2May 8, 2012
Memory array with a selector connected to multiple resistive cells
LEE TZYH-CHEANG0 citations51
US8653576B2Feb 18, 2014
Method of fabricating a SONOS gate structure with dual-thickness oxide
LEE TZYH-CHEANG0 citations41