Inventor
KIM HYUNJUN
US46 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUNJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
14 patentsUS7110263B2Sep 19, 2006
Reference slots for signal traces
INTEL CORP19 citations92
US7027289B2Apr 11, 2006
Extended thin film capacitor (TFC)
INTEL CORP17 citations92
US6885544B2Apr 26, 2005
Vertical capacitor apparatus, systems, and methods
INTEL CORP25 citations92
US7321167B2Jan 22, 2008
Flex tape architecture for integrated circuit signal ingress/egress
INTEL CORP27 citations88
US7345359B2Mar 18, 2008
Integrated circuit package with chip-side signal connections
INTEL CORP14 citations84
US7142073B2Nov 28, 2006
Transmission line impedance matching
INTEL CORP10 citations74
US7123466B2Oct 17, 2006
Extended thin film capacitor (TFC)
INTEL CORP8 citations74
US6877998B1Apr 12, 2005
Power and ground connectors for socket
INTEL CORP11 citations73
US7611924B2Nov 3, 2009
Integrated circuit package with chip-side signal connections
INTEL CORP4 citations63
US7432779B2Oct 7, 2008
Transmission line impedance matching
INTEL CORP4 citations63
US7352557B2Apr 1, 2008
Vertical capacitor apparatus, systems, and methods
INTEL CORP2 citations63
US7348661B2Mar 25, 2008
Array capacitor apparatuses to filter input/output signal
INTEL CORP2 citations63
US7218183B2May 15, 2007
Transmission line impedance matching
INTEL CORP4 citations63
US7209025B2Apr 24, 2007
Multilayer inductor with shielding plane
INTEL CORP0 citations52
SAMSUNG ELECTRONICS CO LTD
11 patentsUS12008170B2Jun 11, 2024
Electronic device for controlling at least one external device and operating method thereof
SAMSUNG ELECTRONICS CO LTD2 citations73
US11348995B2May 31, 2022
Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US12056416B2Aug 6, 2024
Augmented reality device and electronic device interacting with augmented reality device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11695034B2Jul 4, 2023
Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12532447B2Jan 20, 2026
Methods of fabricating a capacitor and semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US12367920B2Jul 22, 2025
SRAM cell configured to perform multiply-accumulate (MAC) operation on multi-bit data based on charge sharing and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11954324B2Apr 9, 2024
Method for performing virtual user interaction, and device therefor
SAMSUNG ELECTRONICS CO LTD0 citations51
US11822728B2Nov 21, 2023
Electronic device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US12477759B2Nov 18, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations47
US12218669B2Feb 4, 2025
Dual-edge-triggered flip-flop
SAMSUNG ELECTRONICS CO LTD0 citations44
US12444458B2Oct 14, 2025
Memory cell array of a static random access memory and a static random access memory including the same
SAMSUNG ELECTRONICS CO LTD0 citations42
CRAY INC
4 patentsUS10595394B1Mar 17, 2020
PCB with minimized crosstalk
CRAY INC11 citations81
US10716213B2Jul 14, 2020
Direct connection of high speed signals on PCB chip
CRAY INC10 citations79
US10154581B2Dec 11, 2018
Method for impedance compensation in printed circuit boards
CRAY INC6 citations69
US10966311B2Mar 30, 2021
Method for cross-talk reduction technique with fine pitch vias
CRAY INC2 citations68
LG DISPLAY CO LTD
3 patentsUS12031224B2Jul 9, 2024
Mask having a plating layer and method of manufacturing the same
LG DISPLAY CO LTD0 citations62
US11629421B2Apr 18, 2023
Mask having plating layers and method of manufacturing the same
LG DISPLAY CO LTD0 citations62
US11085110B2Aug 10, 2021
Mask and method of manufacturing the same
LG DISPLAY CO LTD0 citations62