P

Inventor

NAM KYUNG-TAE

KR30 patents
⚠️ This page may combine multiple inventors who share the name “NAM KYUNG-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
US7952914B2May 31, 2011

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

SAMSUNG ELECTRONICS CO LTD45 citations98
US7495984B2Feb 24, 2009

Resistive memory devices including selected reference memory cells

SAMSUNG ELECTRONICS CO LTD54 citations98
US7672155B2Mar 2, 2010

Resistive memory devices including selected reference memory cells

SAMSUNG ELECTRONICS CO LTD23 citations92
US8345467B2Jan 1, 2013

Resistive memory devices including selected reference memory cells operating responsive to read operations

SAMSUNG ELECTRONICS CO LTD6 citations84
US8023311B2Sep 20, 2011

Resistive memory devices including selected reference memory cells operating responsive to read operations

SAMSUNG ELECTRONICS CO LTD7 citations84
US7871866B2Jan 18, 2011

Method of manufacturing semiconductor device having transition metal oxide layer and related device

SAMSUNG ELECTRONICS CO LTD10 citations84
US7218556B2May 15, 2007

Method of writing to MRAM devices

SAMSUNG ELECTRONICS CO LTD10 citations84
US7750336B2Jul 6, 2010

Resistive memory devices and methods of forming resistive memory devices

SAMSUNG ELECTRONICS CO LTD6 citations73
US7645619B2Jan 12, 2010

Magnetic random access memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US7701748B2Apr 20, 2010

Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same

SAMSUNG ELECTRONICS CO LTD7 citations72
US10043966B2Aug 7, 2018

Semiconductor device including via plugs

SAMSUNG ELECTRONICS CO LTD5 citations69
US8035145B2Oct 11, 2011

Magnetic memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7612969B2Nov 3, 2009

Magnetic memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7582890B2Sep 1, 2009

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

SAMSUNG ELECTRONICS CO LTD3 citations62
US7372090B2May 13, 2008

Magnetic random access memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7732222B2Jun 8, 2010

Magnetic memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9159914B2Oct 13, 2015

Nonvolatile memory devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations51

LEE JANG-EUN

2 patents

KOREA INST IND TECH

2 patents

CHOI SUK-HUN

1 patent

BAEK IN-GYU

1 patent

YIM EUN-KYUNG

1 patent

PARK JEONG-SEOP

1 patent

AHN SU-JIN

1 patent

NAM KYUNG-TAE

1 patent

KIM DUCK-JUNE

1 patent

OH SE-CHUNG

1 patent

KANG EUN GOO

1 patent