Inventor
NAM KYUNG-TAE
KR30 patents
⚠️ This page may combine multiple inventors who share the name “NAM KYUNG-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS7952914B2May 31, 2011
Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
SAMSUNG ELECTRONICS CO LTD45 citations98
US7495984B2Feb 24, 2009
Resistive memory devices including selected reference memory cells
SAMSUNG ELECTRONICS CO LTD54 citations98
US7672155B2Mar 2, 2010
Resistive memory devices including selected reference memory cells
SAMSUNG ELECTRONICS CO LTD23 citations92
US8345467B2Jan 1, 2013
Resistive memory devices including selected reference memory cells operating responsive to read operations
SAMSUNG ELECTRONICS CO LTD6 citations84
US8023311B2Sep 20, 2011
Resistive memory devices including selected reference memory cells operating responsive to read operations
SAMSUNG ELECTRONICS CO LTD7 citations84
US7871866B2Jan 18, 2011
Method of manufacturing semiconductor device having transition metal oxide layer and related device
SAMSUNG ELECTRONICS CO LTD10 citations84
US7218556B2May 15, 2007
Method of writing to MRAM devices
SAMSUNG ELECTRONICS CO LTD10 citations84
US7750336B2Jul 6, 2010
Resistive memory devices and methods of forming resistive memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US7645619B2Jan 12, 2010
Magnetic random access memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7701748B2Apr 20, 2010
Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US10043966B2Aug 7, 2018
Semiconductor device including via plugs
SAMSUNG ELECTRONICS CO LTD5 citations69
US8035145B2Oct 11, 2011
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7612969B2Nov 3, 2009
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7582890B2Sep 1, 2009
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US7372090B2May 13, 2008
Magnetic random access memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7732222B2Jun 8, 2010
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9159914B2Oct 13, 2015
Nonvolatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51