P

Inventor

HSIAO CHING-NAN

TW27 patents
⚠️ This page may combine multiple inventors who share the name “HSIAO CHING-NAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NANYA TECHNOLOGY CORP

23 patents
US6916715B2Jul 12, 2005

Method for fabricating a vertical NROM cell

NANYA TECHNOLOGY CORP51 citations96
US7022573B2Apr 4, 2006

Stack gate with tip vertical memory and method for fabricating the same

NANYA TECHNOLOGY CORP32 citations92
US6670246B1Dec 30, 2003

Method for forming a vertical nitride read-only memory

NANYA TECHNOLOGY CORP31 citations92
US6653188B1Nov 25, 2003

Method of forming poly tip of floating gate in split-gate memory

NANYA TECHNOLOGY CORP26 citations87
US6808987B2Oct 26, 2004

Vertical nitride read-only memory cell and method for forming the same

NANYA TECHNOLOGY CORP13 citations84
US7700991B2Apr 20, 2010

Two bit memory structure and method of making the same

NANYA TECHNOLOGY CORP11 citations82
US7682902B2Mar 23, 2010

Memory structure and method of making the same

NANYA TECHNOLOGY CORP16 citations82
US7135731B2Nov 14, 2006

Vertical DRAM and fabrication method thereof

NANYA TECHNOLOGY CORP8 citations74
US7005701B2Feb 28, 2006

Method for fabricating a vertical NROM cell

NANYA TECHNOLOGY CORP6 citations74
US6870216B2Mar 22, 2005

Stack gate with tip vertical memory and method for fabricating the same

NANYA TECHNOLOGY CORP10 citations74
US7781279B2Aug 24, 2010

Method for manufacturing a memory

NANYA TECHNOLOGY CORP2 citations60
US7855124B2Dec 21, 2010

Method for forming a semiconductor device

NANYA TECHNOLOGY CORP0 citations52
US7476929B2Jan 13, 2009

Multi-bit stacked-type non-volatile memory

NANYA TECHNOLOGY CORP0 citations52
US6995061B2Feb 7, 2006

Multi-bit stacked-type non-volatile memory and manufacture method thereof

NANYA TECHNOLOGY CORP0 citations52
US7972924B2Jul 5, 2011

Method for manufacturing a memory

NANYA TECHNOLOGY CORP0 citations50
US7781804B2Aug 24, 2010

Non-volatile memory

NANYA TECHNOLOGY CORP0 citations50
US7714445B2May 11, 2010

Dynamic random access memory with an electrostatic discharge structure and method for manufacturing the same

NANYA TECHNOLOGY CORP0 citations50
US7642191B2Jan 5, 2010

Method of forming semiconductor structure

NANYA TECHNOLOGY CORP0 citations50
US7576381B2Aug 18, 2009

Memory structure and fabricating method thereof

NANYA TECHNOLOGY CORP0 citations50
US7981743B2Jul 19, 2011

Method of fabricating a memory cell

NANYA TECHNOLOGY CORP0 citations46
US7482227B1Jan 27, 2009

Method for manufacturing a flash memory

NANYA TECHNOLOGY CORP0 citations46
US7868377B2Jan 11, 2011

Layout and structure of memory

NANYA TECHNOLOGY CORP0 citations41
US7713820B2May 11, 2010

Method for manufacturing non-volatile memory

NANYA TECHNOLOGY CORP0 citations39

INOTERA MEMORIES INC

1 patent

HUANG SHIN-BIN

1 patent

TSAI HUNG-MINE

1 patent

HUANG SHIN BIN

1 patent