Inventor
HSIAO CHING-NAN
TW27 patents
⚠️ This page may combine multiple inventors who share the name “HSIAO CHING-NAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
23 patentsUS6916715B2Jul 12, 2005
Method for fabricating a vertical NROM cell
NANYA TECHNOLOGY CORP51 citations96
US7022573B2Apr 4, 2006
Stack gate with tip vertical memory and method for fabricating the same
NANYA TECHNOLOGY CORP32 citations92
US6670246B1Dec 30, 2003
Method for forming a vertical nitride read-only memory
NANYA TECHNOLOGY CORP31 citations92
US6653188B1Nov 25, 2003
Method of forming poly tip of floating gate in split-gate memory
NANYA TECHNOLOGY CORP26 citations87
US6808987B2Oct 26, 2004
Vertical nitride read-only memory cell and method for forming the same
NANYA TECHNOLOGY CORP13 citations84
US7700991B2Apr 20, 2010
Two bit memory structure and method of making the same
NANYA TECHNOLOGY CORP11 citations82
US7682902B2Mar 23, 2010
Memory structure and method of making the same
NANYA TECHNOLOGY CORP16 citations82
US7135731B2Nov 14, 2006
Vertical DRAM and fabrication method thereof
NANYA TECHNOLOGY CORP8 citations74
US7005701B2Feb 28, 2006
Method for fabricating a vertical NROM cell
NANYA TECHNOLOGY CORP6 citations74
US6870216B2Mar 22, 2005
Stack gate with tip vertical memory and method for fabricating the same
NANYA TECHNOLOGY CORP10 citations74
US7781279B2Aug 24, 2010
Method for manufacturing a memory
NANYA TECHNOLOGY CORP2 citations60
US7855124B2Dec 21, 2010
Method for forming a semiconductor device
NANYA TECHNOLOGY CORP0 citations52
US7476929B2Jan 13, 2009
Multi-bit stacked-type non-volatile memory
NANYA TECHNOLOGY CORP0 citations52
US6995061B2Feb 7, 2006
Multi-bit stacked-type non-volatile memory and manufacture method thereof
NANYA TECHNOLOGY CORP0 citations52
US7972924B2Jul 5, 2011
Method for manufacturing a memory
NANYA TECHNOLOGY CORP0 citations50
US7781804B2Aug 24, 2010
Non-volatile memory
NANYA TECHNOLOGY CORP0 citations50
US7714445B2May 11, 2010
Dynamic random access memory with an electrostatic discharge structure and method for manufacturing the same
NANYA TECHNOLOGY CORP0 citations50
US7642191B2Jan 5, 2010
Method of forming semiconductor structure
NANYA TECHNOLOGY CORP0 citations50
US7576381B2Aug 18, 2009
Memory structure and fabricating method thereof
NANYA TECHNOLOGY CORP0 citations50
US7981743B2Jul 19, 2011
Method of fabricating a memory cell
NANYA TECHNOLOGY CORP0 citations46
US7482227B1Jan 27, 2009
Method for manufacturing a flash memory
NANYA TECHNOLOGY CORP0 citations46
US7868377B2Jan 11, 2011
Layout and structure of memory
NANYA TECHNOLOGY CORP0 citations41
US7713820B2May 11, 2010
Method for manufacturing non-volatile memory
NANYA TECHNOLOGY CORP0 citations39