Inventor
CHEN HAO-YU
TW43 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HAO-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
22 patentsUS7074656B2Jul 11, 2006
Doping of semiconductor fin devices
TAIWAN SEMICONDUCTOR MFG128 citations99
US6855606B2Feb 15, 2005
Semiconductor nano-rod devices
TAIWAN SEMICONDUCTOR MFG182 citations99
US6720619B1Apr 13, 2004
Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices
TAIWAN SEMICONDUCTOR MFG172 citations99
US7728360B2Jun 1, 2010
Multiple-gate transistor structure
TAIWAN SEMICONDUCTOR MFG21 citations93
US7635632B2Dec 22, 2009
Gate electrode for a semiconductor fin device
TAIWAN SEMICONDUCTOR MFG17 citations93
US7585711B2Sep 8, 2009
Semiconductor-on-insulator (SOI) strained active area transistor
TAIWAN SEMICONDUCTOR MFG21 citations93
US7176092B2Feb 13, 2007
Gate electrode for a semiconductor fin device
TAIWAN SEMICONDUCTOR MFG30 citations93
US7141459B2Nov 28, 2006
Silicon-on-insulator ULSI devices with multiple silicon film thicknesses
TAIWAN SEMICONDUCTOR MFG24 citations93
US7608515B2Oct 27, 2009
Diffusion layer for stressed semiconductor devices
TAIWAN SEMICONDUCTOR MFG28 citations92
US8053839B2Nov 8, 2011
Doping of semiconductor fin devices
TAIWAN SEMICONDUCTOR MFG8 citations84
US7948037B2May 24, 2011
Multiple-gate transistor structure and method for fabricating
TAIWAN SEMICONDUCTOR MFG11 citations84
US7701008B2Apr 20, 2010
Doping of semiconductor fin devices
TAIWAN SEMICONDUCTOR MFG11 citations84
US7423323B2Sep 9, 2008
Semiconductor device with raised segment
TAIWAN SEMICONDUCTOR MFG12 citations84
US7382023B2Jun 3, 2008
Fully depleted SOI multiple threshold voltage application
TAIWAN SEMICONDUCTOR MFG13 citations84
US7105897B2Sep 12, 2006
Semiconductor structure and method for integrating SOI devices and bulk devices
TAIWAN SEMICONDUCTOR MFG17 citations84
US6872606B2Mar 29, 2005
Semiconductor device with raised segment
TAIWAN SEMICONDUCTOR MFG5 citations74
US7125759B2Oct 24, 2006
Semiconductor-on-insulator (SOI) strained active areas
TAIWAN SEMICONDUCTOR MFG3 citations63
US6979867B2Dec 27, 2005
SOI chip with mesa isolation and recess resistant regions
TAIWAN SEMICONDUCTOR MFG2 citations63
US7638376B2Dec 29, 2009
Method for forming SOI device
TAIWAN SEMICONDUCTOR MFG3 citations62
US7485929B2Feb 3, 2009
Semiconductor-on-insulator (SOI) strained active areas
TAIWAN SEMICONDUCTOR MFG1 citations52
US6864149B2Mar 8, 2005
SOI chip with mesa isolation and recess resistant regions
TAIWAN SEMICONDUCTOR MFG1 citations52
US8049300B2Nov 1, 2011
Inductor energy loss reduction techniques
TAIWAN SEMICONDUCTOR MFG1 citations48
INNOLUX CORP
10 patentsUS12523898B2Jan 13, 2026
Light-emitting device
INNOLUX CORP0 citations62
US12503059B2Dec 23, 2025
Electronic device and vehicle
INNOLUX CORP0 citations62
US12326629B2Jun 10, 2025
Electronic device
INNOLUX CORP0 citations62
US11867989B2Jan 9, 2024
Display device
INNOLUX CORP0 citations62
US11809037B2Nov 7, 2023
Electronic device
INNOLUX CORP0 citations62
US12429721B2Sep 30, 2025
Display device
INNOLUX CORP0 citations61
US11703701B2Jul 18, 2023
Display device
INNOLUX CORP0 citations61
US12147099B2Nov 19, 2024
Electronic device comprising a viewing angle control structure having a phase adjustment structure between a second alignment layer and a second substrate
INNOLUX CORP1 citations58
US12158644B2Dec 3, 2024
Electronic device
INNOLUX CORP0 citations50
US12306485B2May 20, 2025
Electronic device
INNOLUX CORP0 citations49