Inventor · disambiguated record
Shingo Kadomura
Also filed as: KADOMURA SHINGO
51 granted patents·3 pending applications·2,855 citations·filing 1985–2012
99Inventor score
Top patents by PatentIndex Score
54 records- 0198US5310456ADry etching methodSONY CORP·Filed 1991·Granted May 10, 1994·539 cites·9 claims
- 0296US5266157ADry etching methodSONY CORP·Filed 1991·Granted Nov 30, 1993·227 cites·12 claims
- 0395US8828886B2Low dielectric constant insulating film and method for forming the sameSAMUKAWA SEIJI·Filed 2012·Granted Sep 9, 2014·412 cites·17 claims
- 0494US5567268APlasma processing apparatus and method for carrying out plasma processing by using such plasma processing apparatusSONY CORP·Filed 1995·Granted Oct 22, 1996·92 cites·11 claims
- 0593US5366590ADry etching methodSONY CORP·Filed 1994·Granted Nov 22, 1994·142 cites·8 claims
- 0690US5662819APlasma processing method with controlled ion/radical ratioSONY CORP·Filed 1995·Granted Sep 2, 1997·96 cites·5 claims
- 0787US6120661AApparatus for processing glass substrateSONY CORP·Filed 1999·Granted Sep 19, 2000·87 cites·12 claims
- 0886US6096160AHelicon wave plasma processing apparatusSONY CORP·Filed 1997·Granted Aug 1, 2000·70 cites·7 claims
- 0985US5429710ADry etching methodSONY CORP·Filed 1994·Granted Jul 4, 1995·117 cites·17 claims
- 1083US6063710AMethod and apparatus for dry etching with temperature controlSONY CORP·Filed 1997·Granted May 16, 2000·61 cites·16 claims
- 1182US6380065B1Interconnection structure and fabrication process thereforSONY CORP·Filed 1999·Granted Apr 30, 2002·69 cites·8 claims
- 1281US5968273AWafer stage for manufacturing a semiconductor deviceSONY CORP·Filed 1997·Granted Oct 19, 1999·66 cites·2 claims
- 1378US5981913AStatic electricity chuck and wafer stageSONY CORP·Filed 1997·Granted Nov 9, 1999·55 cites·9 claims
- 1476US6174408B1Method and apparatus for dry etchingSONY CORP·Filed 1999·Granted Jan 16, 2001·41 cites·7 claims
- 1576US5540812ADry etching methodSONY CORP·Filed 1994·Granted Jul 30, 1996·44 cites·5 claims
- 1674US6391437B1Composite material and manufacturing method thereof, substrate processing apparatus and manufacturing method thereof, substrate mounting stage and manufacturing method thereof, and substrate processing methodSONY CORP·Filed 1998·Granted May 21, 2002·24 cites·20 claims
- 1773US5312518ADry etching methodSONY CORP·Filed 1992·Granted May 17, 1994·52 cites·9 claims
- 1872US6645852B1Process for fabricating a semiconductor device having recess portionSONY CORP·Filed 2000·Granted Nov 11, 2003·19 cites·6 claims
- 1971US5217570ADry etching methodSONY CORP·Filed 1992·Granted Jun 8, 1993·35 cites·3 claims
- 2067US6668905B1Aluminum nitride/aluminum base composite material and method of producing the sameSONY CORP·Filed 1998·Granted Dec 30, 2003·10 cites·16 claims
- 2164US5326431ADry etching method utilizing (SN)x polymer maskKADOMURA SHINGO·Filed 1992·Granted Jul 5, 1994·38 cites·21 claims
- 2264US5281304AProcess for forming copper wiringSONY CORP·Filed 1992·Granted Jan 25, 1994·31 cites·15 claims
- 2363US6805973B2Aluminum nitride/aluminum base composite material and a method for producing thereofSONY CORP·Filed 2003·Granted Oct 19, 2004·3 cites·6 claims
- 2463US6638848B1Method of etching insulating film and method of forming interconnection layerSONY CORP·Filed 2000·Granted Oct 28, 2003·7 cites·5 claims
- 2563US4654114ADry etching method for selectively etching silicon nitride existing on silicon dioxideSONY CORP·Filed 1985·Granted Mar 31, 1987·26 cites·4 claims
- 2662US5994226ADry etching methodSONY CORP·Filed 1996·Granted Nov 30, 1999·26 cites·15 claims
- 2762US5314576ADry etching method using (SN)x protective layerSONY CORP·Filed 1992·Granted May 24, 1994·31 cites·25 claims
- 2862US2009325328A1Plasma processing apparatus and plasma processing methodSEMICONDUCTOR TECH ACAD RES CT·Filed 2009·Application pending·0 cites
- 2961US5342481ADry etching methodSONY CORP·Filed 1992·Granted Aug 30, 1994·30 cites·8 claims
- 3061US5118387ADry etching methodSONY CORP·Filed 1991·Granted Jun 2, 1992·30 cites·5 claims
- 3160US5180464ADry etching methodSONY CORP·Filed 1991·Granted Jan 19, 1993·29 cites·5 claims
- 3259US5397431ADry etching methodSONY CORP·Filed 1993·Granted Mar 14, 1995·28 cites·24 claims
- 3359US5230772ADry etching methodSONY CORP·Filed 1991·Granted Jul 27, 1993·28 cites·4 claims
- 3457US6191031B1Process for producing multi-layer wiring structureSONY CORP·Filed 1999·Granted Feb 20, 2001·21 cites·8 claims
- 3557US5599742AInterconnection forming methodSONY CORP·Filed 1992·Granted Feb 4, 1997·25 cites·33 claims
- 3656US5078833ADry etching methodSONY CORP·Filed 1990·Granted Jan 7, 1992·25 cites·6 claims
- 3754US5360510ADry etching methodSONY CORP·Filed 1993·Granted Nov 1, 1994·17 cites·6 claims
- 3854US5354421ADry etching methodSONY CORP·Filed 1992·Granted Oct 11, 1994·23 cites·19 claims
- 3954US5320708ADry etching methodSONY CORP·Filed 1992·Granted Jun 14, 1994·23 cites·8 claims
- 4054US5227337AInterconnection forming methodSONY CORP·Filed 1992·Granted Jul 13, 1993·22 cites·4 claims
- 4153US6943104B2Method of etching insulating film and method of forming interconnection layerSONY CORP·Filed 2003·Granted Sep 13, 2005·3 cites·6 claims
- 4252US6352937B1Method for stripping organic based filmSONY CORP·Filed 1998·Granted Mar 5, 2002·16 cites·18 claims
- 4352US2005263247A1Plasma processing apparatus and plasma processing methodSEMICONDUCTOR TECH ACAD RES CT·Filed 2005·Application pending·0 cites
- 4451US5393374AMethod of ashingSONY CORP·Filed 1993·Granted Feb 28, 1995·18 cites·5 claims
- 4550US5401359ADry etching methodSONY CORP·Filed 1992·Granted Mar 28, 1995·19 cites·15 claims
- 4645US5391244ADry etching methodSONY CORP·Filed 1993·Granted Feb 21, 1995·14 cites·27 claims
- 4744US5962084APlasma CVD process and semiconductor device having metal film formed by the processSONY CORP·Filed 1996·Granted Oct 5, 1999·11 cites·13 claims
- 4843US5401358ADry etching methodSONY CORP·Filed 1992·Granted Mar 28, 1995·12 cites·2 claims
- 4941US2002081445A1Composite material manufacturing method thereof, substrate processing apparatus and manufacturing method thereof, substrate mouting stage and manufacturing method thereof, and substrate processing methodFiled 2001·Application pending·0 cites
- 5040US5227341AMethod of manufacturing a semiconductor device using an isopropyl alcohol ashing stepSONY CORP·Filed 1992·Granted Jul 13, 1993·11 cites·7 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →