Inventor
KIM JU-HYUNG
KR52 patents
⚠️ This page may combine multiple inventors who share the name “KIM JU-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS6936884B2Aug 30, 2005
Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
SAMSUNG ELECTRONICS CO LTD67 citations97
US7233214B2Jun 19, 2007
Voltage-controlled oscillators with controlled operating range and related bias circuits and methods
SAMSUNG ELECTRONICS CO LTD39 citations92
US7250653B2Jul 31, 2007
SONOS memory device having nano-sized trap elements
SAMSUNG ELECTRONICS CO LTD21 citations91
US7999307B2Aug 16, 2011
Nonvolatile memory device having cell and peripheral regions and method of making the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7812375B2Oct 12, 2010
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7776687B2Aug 17, 2010
Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7254201B2Aug 7, 2007
Clock and data recovery circuit and method
SAMSUNG ELECTRONICS CO LTD13 citations84
US7105874B2Sep 12, 2006
Single electron transistor having memory function
SAMSUNG ELECTRONICS CO LTD14 citations84
US7629244B2Dec 8, 2009
Method of fabricating a single electron transistor having memory function
SAMSUNG ELECTRONICS CO LTD6 citations74
US7349262B2Mar 25, 2008
Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
SAMSUNG ELECTRONICS CO LTD7 citations72
US7586330B2Sep 8, 2009
Pre-emphasis apparatus, low voltage differential signaling transmitter including the same and pre-emphasis method
SAMSUNG ELECTRONICS CO LTD3 citations63
US7256631B2Aug 14, 2007
Charge pump with balanced and constant up and down currents
SAMSUNG ELECTRONICS CO LTD6 citations63
US7531870B2May 12, 2009
SONOS memory device having nano-sized trap elements
SAMSUNG ELECTRONICS CO LTD3 citations61
US7292078B2Nov 6, 2007
Phase locked loop integrated circuits having fast locking characteristics and methods of operating same
SAMSUNG ELECTRONICS CO LTD5 citations60
US9349879B2May 24, 2016
Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US7842997B2Nov 30, 2010
Nonvolatile memory device having cell and peripheral regions and method of making the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7772639B2Aug 10, 2010
Charge-trap nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7825459B2Nov 2, 2010
Method of operating a SONOS memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9299446B2Mar 29, 2016
Nonvolatile memory device and an erase method thereof
SAMSUNG ELECTRONICS CO LTD0 citations42
HYPERLOOP TECH INC
6 patentsUS11848595B2Dec 19, 2023
Channel segment for a track of a mover device
HYPERLOOP TECH INC3 citations80
US11476745B2Oct 18, 2022
Homopolar linear synchronous machine
HYPERLOOP TECH INC1 citations70
US11196330B2Dec 7, 2021
Homopolar linear synchronous machine utilizing a cold plate
HYPERLOOP TECH INC2 citations70
US11870318B2Jan 9, 2024
Homopolar linear synchronous machine
HYPERLOOP TECH INC0 citations60
US11496035B2Nov 8, 2022
Homopolar linear synchronous machine
HYPERLOOP TECH INC0 citations60
US11682956B2Jun 20, 2023
Homopolar linear synchronous machine
HYPERLOOP TECH INC0 citations59
SAMSUNG SDI CO LTD
4 patentsUS6887616B2May 3, 2005
Electrode unit and secondary battery using the same
SAMSUNG SDI CO LTD26 citations91
US7183019B2Feb 27, 2007
Negative active material composition for a rechargeable lithium battery, method of producing a negative electrode for a rechargeable lithium battery using the same, and rechargeable lithium battery fabricated using the same
SAMSUNG SDI CO LTD5 citations60
US7611797B2Nov 3, 2009
Lithium secondary battery with safety device
SAMSUNG SDI CO LTD3 citations58
US7662511B2Feb 16, 2010
Secondary battery having an enlarged electrolytic solution inlet
SAMSUNG SDI CO LTD1 citations51
KIM JU-HYUNG
4 patentsUS8089114B2Jan 3, 2012
Non-volatile memory devices including blocking and interface patterns between charge storage patterns and control electrodes and related methods
KIM JU-HYUNG6 citations83
US9112045B2Aug 18, 2015
Nonvolatile memory device and fabricating method thereof
KIM JU-HYUNG4 citations73
US8643077B2Feb 4, 2014
Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps
KIM JU-HYUNG3 citations62
US8546870B2Oct 1, 2013
Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices
KIM JU-HYUNG3 citations62
SAMSUNG ELECTRO MECH
2 patentsKIM CHANG-SEOB
2 patentsUS9299970B2Mar 29, 2016
Jelly-roll type battery unit and winding method thereof and lithium secondary battery comprising the same
KIM CHANG-SEOB4 citations71
US8734985B2May 27, 2014
Jelly-roll type battery unit and winding method thereof and lithium secondary battery comprising the same
KIM CHANG-SEOB3 citations60
LIM JAE-SUNG
2 patentsAMOGREENTECH CO LTD
2 patentsLG ENERGY SOLUTION LTD
2 patentsBAHUKHANDI ASHIRWAD
1 patentKIM JU HYUNG
1 patentACE TECH
1 patentJEON SANG-HUN
1 patentPOSCO
1 patentKANG CHANG-SEOK
1 patentWISCONSIN ALUMNI RES FOUND
1 patentShowing the top 50 of 52 patents by PatentIndex Score.