P

Inventor

KIM JU-HYUNG

KR52 patents
⚠️ This page may combine multiple inventors who share the name “KIM JU-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US6936884B2Aug 30, 2005

Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory

SAMSUNG ELECTRONICS CO LTD67 citations97
US7233214B2Jun 19, 2007

Voltage-controlled oscillators with controlled operating range and related bias circuits and methods

SAMSUNG ELECTRONICS CO LTD39 citations92
US7250653B2Jul 31, 2007

SONOS memory device having nano-sized trap elements

SAMSUNG ELECTRONICS CO LTD21 citations91
US7999307B2Aug 16, 2011

Nonvolatile memory device having cell and peripheral regions and method of making the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7812375B2Oct 12, 2010

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7776687B2Aug 17, 2010

Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7254201B2Aug 7, 2007

Clock and data recovery circuit and method

SAMSUNG ELECTRONICS CO LTD13 citations84
US7105874B2Sep 12, 2006

Single electron transistor having memory function

SAMSUNG ELECTRONICS CO LTD14 citations84
US7629244B2Dec 8, 2009

Method of fabricating a single electron transistor having memory function

SAMSUNG ELECTRONICS CO LTD6 citations74
US7349262B2Mar 25, 2008

Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices

SAMSUNG ELECTRONICS CO LTD7 citations72
US7586330B2Sep 8, 2009

Pre-emphasis apparatus, low voltage differential signaling transmitter including the same and pre-emphasis method

SAMSUNG ELECTRONICS CO LTD3 citations63
US7256631B2Aug 14, 2007

Charge pump with balanced and constant up and down currents

SAMSUNG ELECTRONICS CO LTD6 citations63
US7531870B2May 12, 2009

SONOS memory device having nano-sized trap elements

SAMSUNG ELECTRONICS CO LTD3 citations61
US7292078B2Nov 6, 2007

Phase locked loop integrated circuits having fast locking characteristics and methods of operating same

SAMSUNG ELECTRONICS CO LTD5 citations60
US9349879B2May 24, 2016

Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps

SAMSUNG ELECTRONICS CO LTD0 citations52
US7842997B2Nov 30, 2010

Nonvolatile memory device having cell and peripheral regions and method of making the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7772639B2Aug 10, 2010

Charge-trap nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US7825459B2Nov 2, 2010

Method of operating a SONOS memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US9299446B2Mar 29, 2016

Nonvolatile memory device and an erase method thereof

SAMSUNG ELECTRONICS CO LTD0 citations42

HYPERLOOP TECH INC

6 patents

SAMSUNG SDI CO LTD

4 patents

KIM JU-HYUNG

4 patents

SAMSUNG ELECTRO MECH

2 patents

KIM CHANG-SEOB

2 patents

LIM JAE-SUNG

2 patents

AMOGREENTECH CO LTD

2 patents

LG ENERGY SOLUTION LTD

2 patents

BAHUKHANDI ASHIRWAD

1 patent

KIM JU HYUNG

1 patent

ACE TECH

1 patent

JEON SANG-HUN

1 patent

POSCO

1 patent

KANG CHANG-SEOK

1 patent

WISCONSIN ALUMNI RES FOUND

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.