Inventor

LOECHELT GARY H

US62 patents

⚠️ This page may combine multiple inventors who share the name “LOECHELT GARY H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LOECHELT GARY H

SEMICONDUCTOR COMPONENTS IND

Semiconductor device edge termination structure

Semiconductor device having deep trench charge compensation regions and method

Semiconductor device having deep trench charge compensation regions and method

Superjunction semiconductor device structure

Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the same

Electronic device including a trench and a conductive structure therein

Semiconductor device having screening electrode and method

Structure and method of making a high performance semiconductor device having a narrow doping profile

Semiconductor device having deep trench charge compensation regions and method

Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench

Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer

Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method

Process of forming an electronic device including a trench and a conductive structure therein

Semiconductor trench structure having a sealing plug and method

Power semiconductor device having improved performance and method

Integrated circuit with a high speed narrow base width vertical PNP transistor

Semiconductor device having enhanced performance and method

Circuit including a switching element, a rectifying element, and a charge storage element

Power semiconductor device having improved performance and method

Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate

Electronic device including a tapered trench and a conductive structure therein

SEMICONDUCTOR COMPONENTS IND LLC

Termination for a stacked-gate super-junction MOSFET

Electronic device including a termination structure

Stacked-gate super-junction MOSFET

Electronic device including a vertical conductive structure

Process of forming an electronic device including a drift region, a sinker region and a resurf region

Power device having super junction and Schottky diode

Electronic device including a drift region

Electronic device including a dielectric layer having a non-uniform thickness

Electronic device including a transistor structure having different semiconductor base materials

Circuit including dual power converters and an inductor and a method of using an electronic device including a circuit including dual power converters and an inductor

Electronic device including a conductive electrode

DMOS transistor including a gate dielectric having a non-uniform thickness

Circuit including rectifying elements and a charge storage element and a method of using an electronic device including a circuit having switching elements

Electronic device including a conductive electrode and a process of forming the same

LOECHELT GARY H

Process of forming an electronic device including a vertical conductive structure

Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the same

Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same

Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same

Process of forming an electronic device including a trench and a conductive structure therein

Electronic device including a trench and a conductive structure therein

Electronic device including a schottky contact

Electronic device including doped regions between channel and drain regions and a process of forming the same

Electronic device including a tapered trench and a conductive structure therein and a process of forming the same

Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same

Electronic device including a well region

Process of forming an electronic device including an integrated circuit with transistors coupled to each other

GRIVNA GORDON M

Semiconductor trench structure having a sealing plug

MOTOROLA INC

Transistor protection circuit and method

WEN YENTING

Method for manufacturing a semiconductor component and structure therefor