Inventor

WILLMEROTH ARMIN

DE118 patents

⚠️ This page may combine multiple inventors who share the name “WILLMEROTH ARMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WILLMEROTH ARMIN

INFINEON TECHNOLOGIES AUSTRIA

Method for fabricating a semiconductor component

Semiconductor device and integrated apparatus comprising the same

Charge compensation structure and manufacturing therefor

Charge compensation semiconductor devices

Semiconductor device with a super junction structure with one, two or more pairs of compensation layers

Semiconductor component

Semiconductor component and method for producing it

Semiconductor component having a drift zone and a drift control zone

Semiconductor component comprising a drift zone and a drift control zone

Power semiconductor component with charge compensation structure and method for the fabrication thereof

Charge-compensation semiconductor device

Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient

Super junction semiconductor device comprising implanted zones

Manufacturing a super junction semiconductor device

Semiconductor switching devices with different local transconductance

Semiconductor component with a drift region and a drift control region

Super junction semiconductor device having columnar super junction regions

Semiconductor device with a super junction structure having a vertical impurity distribution

Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device

Power semiconductor having a lightly doped drift and buffer layer

INFINEON TECHNOLOGIES AG

Schottky diode having overcurrent protection and low reverse current

Configuration for generating a voltage sense signal in a power semiconductor component

Semiconductor component with a charge compensation structure and associated fabrication

Lateral semiconductor component with a drift zone having at least one field electrode

IGBT with monolithic integrated antiparallel diode

Charge compensation semiconductor configuration

Semiconductor component with enhanced avalanche ruggedness

Power semiconductor component with plate capacitor structure

Component arrangement including a power semiconductor component having a drift control zone

Field-effect-controllable semiconductor component and method for producing the semiconductor component

Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it

Field effect controlled semiconductor component

INFINEON TECHNOLOGIES AUSTRIA AG

VDMOS having a drift zone with a compensation structure

Power semiconductor having a lightly doped drift and buffer layer

Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area

Super junction semiconductor device having a compensation structure

Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

Transistor device with high avalanche robustness

Super junction semiconductor device with a nominal breakdown voltage in a cell area

WEIS ROLF

Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

Semiconductor arrangement with active drift zone

WILLMEROTH ARMIN

Transistor with controllable compensation regions

Transistor with controllable compensation regions

Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor

PFIRSCH FRANK DIETER

Power semiconductor component with a low on-state resistance

Semiconductor component with high breakthrough tension and low forward resistance

PFIRSCH FRANK

Semiconductor component with a drift region and a drift control region

MAUDER ANTON

Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device

INFINEON TECHNOLGIES AG

Compensation component and process for producing the component