Inventor
LEE CHUN-HUNG
TW67 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHUN-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
34 patentsUS9536980B1Jan 3, 2017
Gate spacers and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD44 citations93
US10665457B2May 26, 2020
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10505014B2Dec 10, 2019
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9934971B2Apr 3, 2018
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9640398B2May 2, 2017
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9633907B2Apr 25, 2017
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9412614B2Aug 9, 2016
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11916131B2Feb 27, 2024
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11462408B2Oct 4, 2022
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11121039B2Sep 14, 2021
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10879129B2Dec 29, 2020
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854728B2Dec 1, 2020
Vertical device having a protrusion structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10468308B2Nov 5, 2019
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10170367B2Jan 1, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9590090B2Mar 7, 2017
Method of forming channel of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9570358B2Feb 14, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9472414B2Oct 18, 2016
Self-aligned multiple spacer patterning process
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11120997B2Sep 14, 2021
Surface treatment for etch tuning
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US11749681B2Sep 5, 2023
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12349435B2Jul 1, 2025
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12057342B2Aug 6, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11527430B2Dec 13, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10163723B2Dec 25, 2018
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9899266B2Feb 20, 2018
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9741621B2Aug 22, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12027370B2Jul 2, 2024
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127837B2Sep 21, 2021
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136624B2Nov 5, 2024
Fin Field-Effect Transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US10847409B2Nov 24, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504792B2Dec 10, 2019
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10461170B2Oct 29, 2019
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10312158B2Jun 4, 2019
Method for forming semiconductor device structure with gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276725B2Apr 30, 2019
Gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911661B2Mar 6, 2018
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
MACRONIX INT CO LTD
5 patentsUS7939451B2May 10, 2011
Method for fabricating a pattern
MACRONIX INT CO LTD8 citations83
US6670275B2Dec 30, 2003
Method of rounding a topcorner of trench
MACRONIX INT CO LTD10 citations70
US7435681B2Oct 14, 2008
Methods of etching stacks having metal layers and hard mask layers
MACRONIX INT CO LTD2 citations63
US7550390B2Jun 23, 2009
Method and apparatus for dielectric etching during integrated circuit fabrication
MACRONIX INT CO LTD2 citations60
US6350660B1Feb 26, 2002
Process for forming a shallow trench isolation
MACRONIX INT CO LTD4 citations60
TAIWAN SEMICONDUCTOR MFG
4 patentsUS7910453B2Mar 22, 2011
Storage nitride encapsulation for non-planar sonos NAND flash charge retention
TAIWAN SEMICONDUCTOR MFG396 citations99
US9224833B2Dec 29, 2015
Method of forming a vertical device
TAIWAN SEMICONDUCTOR MFG33 citations98
US9059085B2Jun 16, 2015
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG4 citations83
US9176388B2Nov 3, 2015
Multi-line width pattern created using photolithography
TAIWAN SEMICONDUCTOR MFG2 citations62
MITAC INT CORP
2 patentsHSIEH TZU-YEN
1 patentLEE CHUN-HUNG
1 patentTYAN COMPUTER CORP
1 patent(unassigned)
1 patentCHICONY POWER TECH CO LTD
1 patentShowing the top 50 of 67 patents by PatentIndex Score.