P

Inventor

LEI MING-TA

TW58 patents
⚠️ This page may combine multiple inventors who share the name “LEI MING-TA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

24 patents
US9653594B2May 16, 2017

Semiconductor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11987891B2May 21, 2024

Sensor in an internet-of-things

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11916115B2Feb 27, 2024

Field plate structure to enhance transistor breakdown voltage

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11414763B2Aug 16, 2022

Manufacturing method of sensor in an internet-of-things

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121225B2Sep 14, 2021

Field plate structure to enhance transistor breakdown voltage

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11107899B2Aug 31, 2021

Plate design to decrease noise in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658482B2May 19, 2020

Plate design to decrease noise in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10508345B2Dec 17, 2019

Sensor in an internet-of-things and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10985256B2Apr 20, 2021

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10686047B2Jun 16, 2020

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12464738B2Nov 4, 2025

Integrated chip including a device with a reduced surface field region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302620B2May 13, 2025

Field plate structure to enhance transistor breakdown voltage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024

Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027526B2Jul 2, 2024

Breakdown voltage capability of high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978810B2May 7, 2024

Method for forming an IC including a varactor with reduced surface field region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923429B2Mar 5, 2024

Plate design to decrease noise in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538914B2Dec 27, 2022

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508757B2Nov 22, 2022

Breakdown voltage capability of high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018266B2May 25, 2021

Reduced surface field layer in varactor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11011610B2May 18, 2021

Plate design to decrease noise in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9343465B2May 17, 2016

Integrated circuit for high-voltage device protection

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12557335B2Feb 17, 2026

Transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11444169B2Sep 13, 2022

Transistor device with a gate structure having recesses overlying an interface between isolation and device regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10680019B2Jun 9, 2020

Selective polysilicon doping for gate induced drain leakage improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUCTOR MFG

10 patents

MEGIC CORP

5 patents

MEGICA CORP

4 patents

LEE JIN-YUAN

3 patents

LIN MOU-SHIUNG

2 patents

TSAI WEN-CHI

1 patent

HUANG CHING-CHENG

1 patent

Showing the top 50 of 58 patents by PatentIndex Score.