Inventor
LEI MING-TA
TW58 patents
⚠️ This page may combine multiple inventors who share the name “LEI MING-TA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS9653594B2May 16, 2017
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11987891B2May 21, 2024
Sensor in an internet-of-things
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11916115B2Feb 27, 2024
Field plate structure to enhance transistor breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11414763B2Aug 16, 2022
Manufacturing method of sensor in an internet-of-things
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121225B2Sep 14, 2021
Field plate structure to enhance transistor breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11107899B2Aug 31, 2021
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658482B2May 19, 2020
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10508345B2Dec 17, 2019
Sensor in an internet-of-things and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10985256B2Apr 20, 2021
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10686047B2Jun 16, 2020
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12464738B2Nov 4, 2025
Integrated chip including a device with a reduced surface field region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302620B2May 13, 2025
Field plate structure to enhance transistor breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024
Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027526B2Jul 2, 2024
Breakdown voltage capability of high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978810B2May 7, 2024
Method for forming an IC including a varactor with reduced surface field region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923429B2Mar 5, 2024
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538914B2Dec 27, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508757B2Nov 22, 2022
Breakdown voltage capability of high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018266B2May 25, 2021
Reduced surface field layer in varactor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11011610B2May 18, 2021
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9343465B2May 17, 2016
Integrated circuit for high-voltage device protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12557335B2Feb 17, 2026
Transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11444169B2Sep 13, 2022
Transistor device with a gate structure having recesses overlying an interface between isolation and device regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10680019B2Jun 9, 2020
Selective polysilicon doping for gate induced drain leakage improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
10 patentsUS7176137B2Feb 13, 2007
Method for multiple spacer width control
TAIWAN SEMICONDUCTOR MFG101 citations98
US6710413B2Mar 23, 2004
Salicide field effect transistors with improved borderless contact structures and a method of fabrication
TAIWAN SEMICONDUCTOR MFG30 citations93
US6335249B1Jan 1, 2002
Salicide field effect transistors with improved borderless contact structures and a method of fabrication
TAIWAN SEMICONDUCTOR MFG44 citations93
US7253531B1Aug 7, 2007
Semiconductor bonding pad structure
TAIWAN SEMICONDUCTOR MFG23 citations92
US6943077B2Sep 13, 2005
Selective spacer layer deposition method for forming spacers with different widths
TAIWAN SEMICONDUCTOR MFG24 citations92
US6746900B1Jun 8, 2004
Method for forming a semiconductor device having high-K gate dielectric material
TAIWAN SEMICONDUCTOR MFG17 citations84
US7271103B2Sep 18, 2007
Surface treated low-k dielectric as diffusion barrier for copper metallization
TAIWAN SEMICONDUCTOR MFG8 citations74
US8053894B2Nov 8, 2011
Surface treatment of metal interconnect lines
TAIWAN SEMICONDUCTOR MFG3 citations62
US7439084B2Oct 21, 2008
Predictions of leakage modes in integrated circuits
TAIWAN SEMICONDUCTOR MFG3 citations59
US6033999AMar 7, 2000
Method of solving contact oblique problems of an ILD layer using a rapid thermal anneal
TAIWAN SEMICONDUCTOR MFG5 citations59
MEGIC CORP
5 patentsUS6917119B2Jul 12, 2005
Low fabrication cost, high performance, high reliability chip scale package
MEGIC CORP106 citations99
US6649509B1Nov 18, 2003
Post passivation metal scheme for high-performance integrated circuit devices
MEGIC CORP156 citations99
US6642136B1Nov 4, 2003
Method of making a low fabrication cost, high performance, high reliability chip scale package
MEGIC CORP123 citations99
US6605528B1Aug 12, 2003
Post passivation metal scheme for high-performance integrated circuit devices
MEGIC CORP151 citations99
US6815324B2Nov 9, 2004
Reliable metal bumps on top of I/O pads after removal of test probe marks
MEGIC CORP70 citations96
MEGICA CORP
4 patentsUS7902679B2Mar 8, 2011
Structure and manufacturing method of a chip scale package with low fabrication cost, fine pitch and high reliability solder bump
MEGICA CORP111 citations98
US7465653B2Dec 16, 2008
Reliable metal bumps on top of I/O pads after removal of test probe marks
MEGICA CORP22 citations92
US7355288B2Apr 8, 2008
Low fabrication cost, high performance, high reliability chip scale package
MEGICA CORP20 citations92
US7338890B2Mar 4, 2008
Low fabrication cost, high performance, high reliability chip scale package
MEGICA CORP23 citations92
LEE JIN-YUAN
3 patentsUS9369175B2Jun 14, 2016
Low fabrication cost, high performance, high reliability chip scale package
LEE JIN-YUAN9 citations84
US8481418B2Jul 9, 2013
Low fabrication cost, high performance, high reliability chip scale package
LEE JIN-YUAN6 citations84
US8178967B2May 15, 2012
Low fabrication cost, high performance, high reliability chip scale package
LEE JIN-YUAN3 citations63
LIN MOU-SHIUNG
2 patentsTSAI WEN-CHI
1 patentHUANG CHING-CHENG
1 patentShowing the top 50 of 58 patents by PatentIndex Score.