Inventor
HOLT JUDSON ROBERT
US20 patents
⚠️ This page may combine multiple inventors who share the name “HOLT JUDSON ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES US INC
5 patentsUS11043566B2Jun 22, 2021
Semiconductor structures in a wide gate pitch region of semiconductor devices
GLOBALFOUNDRIES US INC0 citations62
US12426315B2Sep 23, 2025
IC device with vertically-graded silicon germanium region adjacent device channel and method for forming
GLOBALFOUNDRIES US INC0 citations61
US11056591B2Jul 6, 2021
Epitaxial structures of semiconductor devices that are independent of local pattern density
GLOBALFOUNDRIES US INC0 citations60
US11652142B2May 16, 2023
Lateral bipolar junction transistors having an emitter extension and a halo region
GLOBALFOUNDRIES US INC1 citations59
US11393915B2Jul 19, 2022
Epi semiconductor structures with increased epi volume in source/drain regions of a transistor device formed on an SOI substrate
GLOBALFOUNDRIES US INC0 citations52
GLOBALFOUNDRIES INC
4 patentsUS10163635B1Dec 25, 2018
Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method
GLOBALFOUNDRIES INC26 citations94
US10043893B1Aug 7, 2018
Post gate silicon germanium channel condensation and method for producing the same
GLOBALFOUNDRIES INC5 citations82
US9349864B1May 24, 2016
Methods for selectively forming a layer of increased dopant concentration
GLOBALFOUNDRIES INC7 citations78
US10326007B2Jun 18, 2019
Post gate silicon germanium channel condensation and method for producing the same
GLOBALFOUNDRIES INC0 citations51