P

Inventor

TERASAWA YOSHIO

JP33 patents
⚠️ This page may combine multiple inventors who share the name “TERASAWA YOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NGK INSULATORS LTD

18 patents
US6025233AFeb 15, 2000

Method of manufacturing a semiconductor device

NGK INSULATORS LTD89 citations98
US6002143ADec 14, 1999

Hybrid vertical type power semiconductor device

NGK INSULATORS LTD49 citations96
US6075269AJun 13, 2000

Semiconductor device and process for manufacturing the same

NGK INSULATORS LTD41 citations92
US5930651AJul 27, 1999

Method of forming a semiconductor device having a plurality of cavity defined gating regions

NGK INSULATORS LTD34 citations92
US6180965B1Jan 30, 2001

Semiconductor device having a static induction in a recessed portion

NGK INSULATORS LTD7 citations74
US5894140AApr 13, 1999

Semiconductor device having recessed gate structures and method of manufacturing the same

NGK INSULATORS LTD12 citations74
US5757035AMay 26, 1998

Semiconductor device

NGK INSULATORS LTD6 citations74
US5739044AApr 14, 1998

Method of manufacturing semiconductor device

NGK INSULATORS LTD12 citations74
US5702962ADec 30, 1997

Fabrication process for a static induction transistor

NGK INSULATORS LTD8 citations74
US5648665AJul 15, 1997

Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor

NGK INSULATORS LTD7 citations74
US5602405AFeb 11, 1997

Semiconductor device with base formed by the junction of two semiconductors of the same conductive type

NGK INSULATORS LTD8 citations74
US5591991AJan 7, 1997

Semiconductor device and method of manufacturing the same

NGK INSULATORS LTD9 citations74
US6159776ADec 12, 2000

Method for manufacturing semiconductor device

NGK INSULATORS LTD3 citations63
US5946572AAug 31, 1999

Method of manufacturing a semiconductor device having recessed gate structures

NGK INSULATORS LTD3 citations63
US5841155ANov 24, 1998

Semiconductor device containing two joined substrates

NGK INSULATORS LTD2 citations63
US5956577ASep 21, 1999

Method of manufacturing serrated gate-type or joined structure

NGK INSULATORS LTD0 citations52
US5950075ASep 7, 1999

Semiconductor device having recessed gate regions and method of manufacturing the same

NGK INSULATORS LTD1 citations52
US5847417ADec 8, 1998

Semiconductor device and method of manufacturing same

NGK INSULATORS LTD1 citations52

HITACHI LTD

15 patents
US4514747AApr 30, 1985

Field controlled thyristor with double-diffused source region

HITACHI LTD32 citations92
US4223328ASep 16, 1980

Field controlled thyristor with dual resistivity field layer

HITACHI LTD42 citations92
US3939415AFeb 17, 1976

Method of and device for measuring life time of carriers of semiconductor

HITACHI LTD40 citations92
US4354121AOct 12, 1982

Field controlled thyristor control circuit with additional FCT in reverse bias circuit

HITACHI LTD10 citations74
US4329772AMay 18, 1982

Method for manufacturing a semiconductor device utilizing selective epitaxial growth and post heat treating

HITACHI LTD11 citations74
US3978513AAug 31, 1976

Semiconductor controlled rectifying device

HITACHI LTD8 citations74
US4214254AJul 22, 1980

Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion

HITACHI LTD5 citations63
US4114178ASep 12, 1978

Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate

HITACHI LTD5 citations63
US4063270ADec 13, 1977

Semiconductor controlled rectifier device having amplifying gate structure

HITACHI LTD4 citations63
US4016591AApr 5, 1977

Semiconductor controlled rectifier

HITACHI LTD3 citations63
US3990090ANov 2, 1976

Semiconductor controlled rectifier

HITACHI LTD3 citations63
US3943548AMar 9, 1976

Semiconductor controlled rectifier

HITACHI LTD5 citations63
US4713679ADec 15, 1987

Reverse blocking type semiconductor device

HITACHI LTD5 citations62
US4210924AJul 1, 1980

Semiconductor controlled rectifier with configured cathode to eliminate hot-spots

HITACHI LTD2 citations55
US4404580ASep 13, 1983

Light activated semiconductor device

HITACHI LTD1 citations52