Inventor
TERASAWA YOSHIO
JP33 patents
⚠️ This page may combine multiple inventors who share the name “TERASAWA YOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NGK INSULATORS LTD
18 patentsUS6025233AFeb 15, 2000
Method of manufacturing a semiconductor device
NGK INSULATORS LTD89 citations98
US6002143ADec 14, 1999
Hybrid vertical type power semiconductor device
NGK INSULATORS LTD49 citations96
US6075269AJun 13, 2000
Semiconductor device and process for manufacturing the same
NGK INSULATORS LTD41 citations92
US5930651AJul 27, 1999
Method of forming a semiconductor device having a plurality of cavity defined gating regions
NGK INSULATORS LTD34 citations92
US6180965B1Jan 30, 2001
Semiconductor device having a static induction in a recessed portion
NGK INSULATORS LTD7 citations74
US5894140AApr 13, 1999
Semiconductor device having recessed gate structures and method of manufacturing the same
NGK INSULATORS LTD12 citations74
US5757035AMay 26, 1998
Semiconductor device
NGK INSULATORS LTD6 citations74
US5739044AApr 14, 1998
Method of manufacturing semiconductor device
NGK INSULATORS LTD12 citations74
US5702962ADec 30, 1997
Fabrication process for a static induction transistor
NGK INSULATORS LTD8 citations74
US5648665AJul 15, 1997
Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor
NGK INSULATORS LTD7 citations74
US5602405AFeb 11, 1997
Semiconductor device with base formed by the junction of two semiconductors of the same conductive type
NGK INSULATORS LTD8 citations74
US5591991AJan 7, 1997
Semiconductor device and method of manufacturing the same
NGK INSULATORS LTD9 citations74
US6159776ADec 12, 2000
Method for manufacturing semiconductor device
NGK INSULATORS LTD3 citations63
US5946572AAug 31, 1999
Method of manufacturing a semiconductor device having recessed gate structures
NGK INSULATORS LTD3 citations63
US5841155ANov 24, 1998
Semiconductor device containing two joined substrates
NGK INSULATORS LTD2 citations63
US5956577ASep 21, 1999
Method of manufacturing serrated gate-type or joined structure
NGK INSULATORS LTD0 citations52
US5950075ASep 7, 1999
Semiconductor device having recessed gate regions and method of manufacturing the same
NGK INSULATORS LTD1 citations52
US5847417ADec 8, 1998
Semiconductor device and method of manufacturing same
NGK INSULATORS LTD1 citations52
HITACHI LTD
15 patentsUS4514747AApr 30, 1985
Field controlled thyristor with double-diffused source region
HITACHI LTD32 citations92
US4223328ASep 16, 1980
Field controlled thyristor with dual resistivity field layer
HITACHI LTD42 citations92
US3939415AFeb 17, 1976
Method of and device for measuring life time of carriers of semiconductor
HITACHI LTD40 citations92
US4354121AOct 12, 1982
Field controlled thyristor control circuit with additional FCT in reverse bias circuit
HITACHI LTD10 citations74
US4329772AMay 18, 1982
Method for manufacturing a semiconductor device utilizing selective epitaxial growth and post heat treating
HITACHI LTD11 citations74
US3978513AAug 31, 1976
Semiconductor controlled rectifying device
HITACHI LTD8 citations74
US4214254AJul 22, 1980
Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion
HITACHI LTD5 citations63
US4114178ASep 12, 1978
Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate
HITACHI LTD5 citations63
US4063270ADec 13, 1977
Semiconductor controlled rectifier device having amplifying gate structure
HITACHI LTD4 citations63
US4016591AApr 5, 1977
Semiconductor controlled rectifier
HITACHI LTD3 citations63
US3990090ANov 2, 1976
Semiconductor controlled rectifier
HITACHI LTD3 citations63
US3943548AMar 9, 1976
Semiconductor controlled rectifier
HITACHI LTD5 citations63
US4713679ADec 15, 1987
Reverse blocking type semiconductor device
HITACHI LTD5 citations62
US4210924AJul 1, 1980
Semiconductor controlled rectifier with configured cathode to eliminate hot-spots
HITACHI LTD2 citations55
US4404580ASep 13, 1983
Light activated semiconductor device
HITACHI LTD1 citations52