P

Inventor

HAYASHI SHINICHIRO

JP66 patents
⚠️ This page may combine multiple inventors who share the name “HAYASHI SHINICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SYMETRIX CORP

24 patents
US6198225B1Mar 6, 2001

Ferroelectric flat panel displays

SYMETRIX CORP109 citations98
US5759923AJun 2, 1998

Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits

SYMETRIX CORP102 citations98
US6495878B1Dec 17, 2002

Interlayer oxide containing thin films for high dielectric constant application

SYMETRIX CORP64 citations96
US6151241ANov 21, 2000

Ferroelectric memory with disturb protection

SYMETRIX CORP83 citations96
US6104049AAug 15, 2000

Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

SYMETRIX CORP53 citations96
US5962085AOct 5, 1999

Misted precursor deposition apparatus and method with improved mist and mist flow

SYMETRIX CORP75 citations96
US6830623B2Dec 14, 2004

Method of liquid deposition by selection of liquid viscosity and other precursor properties

SYMETRIX CORP32 citations93
US6541279B2Apr 1, 2003

Method for forming an integrated circuit

SYMETRIX CORP24 citations93
US6469334B2Oct 22, 2002

Ferroelectric field effect transistor

SYMETRIX CORP20 citations93
US6383555B1May 7, 2002

Misted precursor deposition apparatus and method with improved mist and mist flow

SYMETRIX CORP18 citations93
US6358758B2Mar 19, 2002

Low imprint ferroelectric material for long retention memory and method of making the same

SYMETRIX CORP18 citations93
US6281534B1Aug 28, 2001

Low imprint ferroelectric material for long retention memory and method of making the same

SYMETRIX CORP40 citations93
US6255121B1Jul 3, 2001

Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor

SYMETRIX CORP27 citations93
US6143063ANov 7, 2000

Misted precursor deposition apparatus and method with improved mist and mist flow

SYMETRIX CORP40 citations93
US5849071ADec 15, 1998

Liquid source formation of thin films using hexamethyl-disilazane

SYMETRIX CORP27 citations92
US5843516ADec 1, 1998

Liquid source formation of thin films using hexamethyl-disilazane

SYMETRIX CORP30 citations92
US6447838B1Sep 10, 2002

Integrated circuit capacitors with barrier layer and process for making the same

SYMETRIX CORP15 citations84
US6448190B1Sep 10, 2002

Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid

SYMETRIX CORP17 citations84
US6867452B2Mar 15, 2005

Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

SYMETRIX CORP7 citations74
US6133092AOct 17, 2000

Low temperature process for fabricating layered superlattice materials and making electronic devices including same

SYMETRIX CORP11 citations74
US6017579AJan 25, 2000

Method of forming magnesium oxide films on glass substrate for use in plasma display panels

SYMETRIX CORP10 citations74
US5972428AOct 26, 1999

Methods and apparatus for material deposition using primer

SYMETRIX CORP16 citations74
US5965219AOct 12, 1999

Misted deposition method with applied UV radiation

SYMETRIX CORP16 citations74
US6653156B2Nov 25, 2003

Ferroelectric device with capping layer and method of making same

SYMETRIX CORP3 citations63

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

15 patents
US6590252B2Jul 8, 2003

Semiconductor device with oxygen diffusion barrier layer termed from composite nitride

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD57 citations96
US6541375B1Apr 1, 2003

DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD38 citations93
US7091541B2Aug 15, 2006

Semiconductor device using a conductive film and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations90
US6891715B2May 10, 2005

Capacitor and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6440754B2Aug 27, 2002

Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US7132300B2Nov 7, 2006

Method for forming ferroelectric film and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations81
US6939725B2Sep 6, 2005

Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations74
US6737697B2May 18, 2004

Semiconductor device and method and system for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations74
US6351004B1Feb 26, 2002

Tunneling transistor applicable to nonvolatile memory

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US7220598B1May 22, 2007

Method of making ferroelectric thin film having a randomly oriented layer and spherical crystal conductor structure

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7166884B2Jan 23, 2007

Method for fabricating semiconductor device and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7015564B2Mar 21, 2006

Capacitive element and semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations63
USRE38565EAug 17, 2004

Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6756621B2Jun 29, 2004

Ferroelectric capacitor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6753566B2Jun 22, 2004

Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63

UNIV TEXAS

3 patents

OGAWA YUICHI

3 patents

PANASONIC CORP

1 patent

HAYASHI SHINICHIRO

1 patent

MATSUSHITA ELECTRONICS CORP

1 patent

MITSUBISHI ELECTRIC CORP

1 patent

SAKURA COLOR PROD CORP

1 patent

Showing the top 50 of 66 patents by PatentIndex Score.