Inventor

SOLAYAPPAN NARAYAN

US33 patents

Patents

33 patents

US6511718B1Jan 28, 2003

Method and apparatus for fabrication of thin films by chemical vapor deposition

SYMETRIX CORP191 citations98

US6110531AAug 29, 2000

Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

SYMETRIX CORP523 citations98

US7075134B2Jul 11, 2006

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

SYMETRIX CORP57 citations96

US6781184B2Aug 24, 2004

Barrier layers for protecting metal oxides from hydrogen degradation

SYMETRIX CORP48 citations96

US6495878B1Dec 17, 2002

Interlayer oxide containing thin films for high dielectric constant application

SYMETRIX CORP64 citations96

US6258733B1Jul 10, 2001

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

SYMETRIX CORP60 citations96

US6104049AAug 15, 2000

Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

SYMETRIX CORP53 citations96

US5962069AOct 5, 1999

Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures

SYMETRIX CORP52 citations95

US6559469B1May 6, 2003

Ferroelectric and high dielectric constant transistors

SYMETRIX CORP28 citations93

US6541279B2Apr 1, 2003

Method for forming an integrated circuit

SYMETRIX CORP24 citations93

US6322849B2Nov 27, 2001

Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gas

SYMETRIX CORP33 citations93

US6245580B1Jun 12, 2001

Low temperature process for fabricating layered superlattice materials and making electronic devices including same

SYMETRIX CORP21 citations93

US6171934B1Jan 9, 2001

Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling

SYMETRIX CORP39 citations93

US6116184ASep 12, 2000

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

SYMETRIX CORP27 citations93

US5997642ADec 7, 1999

Method and apparatus for misted deposition of integrated circuit quality thin films

SYMETRIX CORP31 citations93

US5784310AJul 21, 1998

Low imprint ferroelectric material for long retention memory and method of making the same

SYMETRIX CORP26 citations93

US6831313B2Dec 14, 2004

Ferroelectric composite material, method of making same and memory utilizing same

SYMETRIX CORP34 citations92

US6787181B2Sep 7, 2004

Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth

SYMETRIX CORP34 citations92

US6326315B1Dec 4, 2001

Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same

SYMETRIX CORP43 citations92

US5849071ADec 15, 1998

Chemical vapor deposition process for fabricating layered superlattice materials

SYMETRIX CORP14 citations84

US6437380B1Aug 20, 2002

Ferroelectric device with bismuth tantalate capping layer and method of making same

SYMETRIX CORP17 citations84

US7064374B2Jun 20, 2006

Barrier layers for protecting metal oxides from hydrogen degradation

SYMETRIX CORP7 citations74

US6867452B2Mar 15, 2005

Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

SYMETRIX CORP7 citations74

US6743643B2Jun 1, 2004

Stacked memory cell having diffusion barriers

SYMETRIX CORP9 citations74

US6706585B2Mar 16, 2004

Chemical vapor deposition process for fabricating layered superlattice materials

SYMETRIX CORP7 citations74

US5883828AMar 16, 1999

Low imprint ferroelectric material for long retention memory and method of making the same

SYMETRIX CORP10 citations74

US5846597ADec 8, 1998

Liquid source formation of thin films using hexamethyl-disilazane

SYMETRIX CORP1 citations63

US7459318B2Dec 2, 2008

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

SYMETRIX CORP1 citations52

US7187079B2Mar 6, 2007

Stacked memory cell having diffusion barriers

SYMETRIX CORP1 citations52

SOLAYAPPAN NARAYAN

Patents

Method and apparatus for fabrication of thin films by chemical vapor deposition

Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

Barrier layers for protecting metal oxides from hydrogen degradation

Interlayer oxide containing thin films for high dielectric constant application

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures

Ferroelectric and high dielectric constant transistors

Method for forming an integrated circuit

Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gas

Low temperature process for fabricating layered superlattice materials and making electronic devices including same

Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

Method and apparatus for misted deposition of integrated circuit quality thin films

Low imprint ferroelectric material for long retention memory and method of making the same

Ferroelectric composite material, method of making same and memory utilizing same

Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth

Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same

Liquid source formation of thin films using hexamethyl-disilazane

Liquid source formation of thin films using hexamethyl-disilazane

Low thermal budget fabrication of ferroelectric memory using RTP

Low temperature oxidizing method of making a layered superlattice material

Chemical vapor deposition process for fabricating layered superlattice materials

Ferroelectric device with bismuth tantalate capping layer and method of making same

Barrier layers for protecting metal oxides from hydrogen degradation

Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

Stacked memory cell having diffusion barriers

Chemical vapor deposition process for fabricating layered superlattice materials

Low imprint ferroelectric material for long retention memory and method of making the same

Liquid source formation of thin films using hexamethyl-disilazane

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

Stacked memory cell having diffusion barriers