P

Inventor

SHIN DONG-SUK

KR155 patents
⚠️ This page may combine multiple inventors who share the name “SHIN DONG-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

26 patents
US9337031B2May 10, 2016

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD311 citations98
US7361563B2Apr 22, 2008

Methods of fabricating a semiconductor device using a selective epitaxial growth technique

SAMSUNG ELECTRONICS CO LTD94 citations98
US10361202B2Jul 23, 2019

Multigate metal-oxide semiconductor field effect transistor

SAMSUNG ELECTRONICS CO LTD15 citations94
US10297601B2May 21, 2019

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD19 citations94
US7989296B2Aug 2, 2011

Semiconductor device and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD20 citations93
US7671420B2Mar 2, 2010

Semiconductor devices having faceted channels and methods of fabricating such devices

SAMSUNG ELECTRONICS CO LTD28 citations92
US7354835B2Apr 8, 2008

Method of fabricating CMOS transistor and CMOS transistor fabricated thereby

SAMSUNG ELECTRONICS CO LTD26 citations92
US9034700B1May 19, 2015

Integrated circuit devices including finFETs and methods of forming the same

SAMSUNG ELECTRONICS CO LTD24 citations89
US10121791B2Nov 6, 2018

Multi-gate transistor

SAMSUNG ELECTRONICS CO LTD7 citations84
US9847224B2Dec 19, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US9768300B2Sep 19, 2017

Semiconductor devices including a stressor in a recess and methods of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations84
US9728645B2Aug 8, 2017

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations84
US9679978B2Jun 13, 2017

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7973309B2Jul 5, 2011

TEG pattern for detecting void in device isolation layer and method of forming the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7867867B2Jan 11, 2011

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US7601983B2Oct 13, 2009

Transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7435657B2Oct 14, 2008

Method of fabricating transistor including buried insulating layer and transistor fabricated using the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US10211322B1Feb 19, 2019

Semiconductor device including channel pattern and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD12 citations83
US9985036B2May 29, 2018

Semiconductor device having embedded strain-inducing pattern and method of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US9502563B2Nov 22, 2016

Semiconductor device having embedded strain-inducing pattern and method of forming the same

SAMSUNG ELECTRONICS CO LTD4 citations83
US8907426B2Dec 9, 2014

Semiconductor device having embedded strain-inducing pattern and method of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations83
US10304932B2May 28, 2019

Semiconductor device having a fin structure and a manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD8 citations81
US7704808B2Apr 27, 2010

Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts

SAMSUNG ELECTRONICS CO LTD5 citations74
US7611973B2Nov 3, 2009

Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US11037926B2Jun 15, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US10084049B2Sep 25, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73

HYNIX SEMICONDUCTOR INC

9 patents

UNIV TEXAS

6 patents

SHIN DONG-SUK

4 patents

XCATH INC

3 patents

KIM KI HAN

1 patent

JEONG YEONG-JONG

1 patent

Showing the top 50 of 155 patents by PatentIndex Score.