P

Inventor

CHOWDHURY MOHAMMAD KAMRUZZAMAN

US15 patents
⚠️ This page may combine multiple inventors who share the name “CHOWDHURY MOHAMMAD KAMRUZZAMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

14 patents
US9252057B2Feb 2, 2016

Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application

APPLIED MATERIALS INC7 citations84
US8969177B2Mar 3, 2015

Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film

APPLIED MATERIALS INC17 citations84
US11600761B2Mar 7, 2023

High critical temperature metal nitride layer with oxide or oxynitride seed layer

APPLIED MATERIALS INC4 citations73
US9620379B2Apr 11, 2017

Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch

APPLIED MATERIALS INC3 citations73
US11678589B2Jun 13, 2023

Method of making high critical temperature metal nitride layer

APPLIED MATERIALS INC1 citations72
USD1069863SApr 8, 2025

Deposition ring of a process kit for semiconductor substrate processing

APPLIED MATERIALS INC4 citations71
USD1059312SJan 28, 2025

Deposition ring of a process kit for semiconductor substrate processing

APPLIED MATERIALS INC4 citations71
US12185643B2Dec 31, 2024

High critical temperature metal nitride layer with oxide or oxynitride seed layer

APPLIED MATERIALS INC0 citations61
US12096701B2Sep 17, 2024

Method of making high critical temperature metal nitride layer

APPLIED MATERIALS INC0 citations61
US12052935B2Jul 30, 2024

Method of making high critical temperature metal nitride layer

APPLIED MATERIALS INC0 citations61
US12553133B2Feb 17, 2026

Substrate handling system, method, and apparatus

APPLIED MATERIALS INC0 citations59
USD1064005SFeb 25, 2025

Grounding ring of a process kit for semiconductor substrate processing

APPLIED MATERIALS INC0 citations59
US9721839B2Aug 1, 2017

Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch

APPLIED MATERIALS INC0 citations52
US10400327B2Sep 3, 2019

Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor

APPLIED MATERIALS INC0 citations41

CHOWDHURY MOHAMMAD KAMRUZZAMAN

1 patent