Inventor

CHANG FU-CHEN

TW40 patents

⚠️ This page may combine multiple inventors who share the name “CHANG FU-CHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG FU-CHEN

TAIWAN SEMICONDUCTOR MFG CO LTD

RRAM bottom electrode

Semiconductor device and method for manufacturing the same

Semiconductor die singulation and structures formed thereby

FeRAM decoupling capacitor

FeRAM MFM structure with selective electrode etch

RRAM bottom electrode

Memory cell having top and bottom electrodes defining recesses

Semiconductor die singulation and structures formed thereby

Semiconductor die singulation and structures formed thereby

Method for forming RRAM with a barrier layer

RRAM with a barrier layer

Semiconductor die having edge with multiple gradients and method for forming the same

RRAM with a barrier layer

Semiconductor device

Interfacial layer with high texture uniformity for ferroelectric layer enhancement

Ferroelectric memory device with blocking layer

MFM device with an enhanced bottom electrode

RRAM bottom electrode

Semiconductor device and method of forming the same

FeRAM MFM structure with selective electrode etch

FeRAM decoupling capacitor

Method for forming semiconductor die having edge with multiple gradients

Semiconductor device and method for manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of forming the same

Memory cell having a top electrode interconnect arranged laterally from a recess

FeRAM MFM structure with selective electrode etch

Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)

Integrated circuit structure and method of forming the same

Semiconductor device and method of forming the same

Semiconductor die having edge with multiple gradients and method for forming the same

Method of fabricating semiconductor device comprising ferroelectric layer

Methods for enlarging the memory window and improving data retention in resistive memory device

Methods for enlarging the memory window and improving data retention in restistive memory device

Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)

Method for efficiently waking up ferroelectric memory

Immersion de-taping

Immersion de-taping

Semiconductor packaged wafer and method for forming the same

(unassigned)

Buffer of a damping mechanism of an exercise machine