Inventor
CAMPARDO GIOVANNI
IT101 patents
⚠️ This page may combine multiple inventors who share the name “CAMPARDO GIOVANNI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
35 patentsUS6646913B2Nov 11, 2003
Method for storing and reading data in a multilevel nonvolatile memory
ST MICROELECTRONICS SRL89 citations98
US6356481B1Mar 12, 2002
Row decoder for a nonvolatile memory with capability of selectively biasing word lines to positive or negative voltages
ST MICROELECTRONICS SRL76 citations96
US5982666ANov 9, 1999
Sense amplifier circuit for semiconductor memory devices
ST MICROELECTRONICS SRL62 citations96
US6396168B2May 28, 2002
Programmable logic arrays
ST MICROELECTRONICS SRL55 citations95
US6515911B2Feb 4, 2003
Circuit structure for providing a hierarchical decoding in semiconductor memory devices
ST MICROELECTRONICS SRL21 citations93
US6493260B2Dec 10, 2002
Nonvolatile memory device, having parts with different access time, reliability, and capacity
ST MICROELECTRONICS SRL26 citations93
US6456527B1Sep 24, 2002
Nonvolatile multilevel memory and reading method thereof
ST MICROELECTRONICS SRL29 citations93
US6122200ASep 19, 2000
Row decoder for a flash-EEPROM memory device with the possibility of selective erasing of a sub-group of rows of a sector
ST MICROELECTRONICS SRL23 citations93
US6891755B2May 10, 2005
Architecture for a flash-EEPROM simultaneously readable in other sectors while erasing and/or programming one or more sectors
ST MICROELECTRONICS SRL25 citations92
US6871258B2Mar 22, 2005
Method for erasing an electrically erasable nonvolatile memory device, in particular an eeprom-flash memory device, and an electrically erasable nonvolatile memory device, in particular an eeprom-flash memory device
ST MICROELECTRONICS SRL41 citations92
US6301152B1Oct 9, 2001
Non-volatile memory device with row redundancy
ST MICROELECTRONICS SRL31 citations92
US6266222B1Jul 24, 2001
ESD protection network for circuit structures formed in a semiconductor
ST MICROELECTRONICS SRL29 citations92
US6181602B1Jan 30, 2001
Device and method for reading nonvolatile memory cells
ST MICROELECTRONICS SRL23 citations92
US6128225AOct 3, 2000
Method and circuit for reading low-supply-voltage nonvolatile memory cells
ST MICROELECTRONICS SRL23 citations92
US5946238AAug 31, 1999
Single-cell reference signal generating circuit for reading nonvolatile memory
ST MICROELECTRONICS SRL46 citations92
US5633822AMay 27, 1997
Method of programming a nonvolatile flash-EEPROM memory array using source line switching transistors
ST MICROELECTRONICS SRL34 citations92
US6351413B1Feb 26, 2002
Nonvolatile memory device, in particular a flash-EEPROM
ST MICROELECTRONICS SRL25 citations90
US7592849B2Sep 22, 2009
Level shifter for semiconductor memory device implemented with low-voltage transistors
ST MICROELECTRONICS SRL8 citations84
US7027317B2Apr 11, 2006
Semiconductor memory with embedded DRAM
ST MICROELECTRONICS SRL11 citations84
US6724658B2Apr 20, 2004
Method and circuit for generating reference voltages for reading a multilevel memory cell
ST MICROELECTRONICS SRL14 citations84
US6456530B1Sep 24, 2002
Nonvolatile memory device with hierarchical sector decoding
ST MICROELECTRONICS SRL14 citations84
US6433583B1Aug 13, 2002
CMOS switch circuit for transferring high voltages, in particular for line decoding in nonvolatile memories, with reduced consumption during switching
ST MICROELECTRONICS SRL17 citations84
US6327184B1Dec 4, 2001
Read circuit for a nonvolatile memory
ST MICROELECTRONICS SRL16 citations84
US5903498AMay 11, 1999
Low-supply-voltage nonvolatile memory device with voltage boosting
ST MICROELECTRONICS SRL17 citations84
US5587946ADec 24, 1996
Method of reading, erasing and programming a nonvolatile flash-EEPROM memory arrray using source line switching transistors
ST MICROELECTRONICS SRL17 citations82
US6643179B2Nov 4, 2003
Method and circuit for dynamic reading of a memory cell, in particular a multi-level nonvolatile memory cell
ST MICROELECTRONICS SRL8 citations74
US6639833B2Oct 28, 2003
Method and circuit for dynamic reading of a memory cell at low supply voltage and with low output dynamics
ST MICROELECTRONICS SRL9 citations74
US6587914B2Jul 1, 2003
Non-volatile memory capable of autonomously executing a program
ST MICROELECTRONICS SRL8 citations74
US6301149B1Oct 9, 2001
Method for reading a multilevel nonvolatile memory and multilevel nonvolatile memory
ST MICROELECTRONICS SRL11 citations74
US6094073AJul 25, 2000
Line decoder for memory devices
ST MICROELECTRONICS SRL6 citations74
US5682349AOct 28, 1997
Failure tolerant memory device, in particular of the flash EEPROM type
ST MICROELECTRONICS SRL10 citations74
US5541880AJul 30, 1996
Reference signal generating method and circuit for differential evaluation of the content of nonvolatile memory cells
ST MICROELECTRONICS SRL12 citations74
US5508956AApr 16, 1996
Nonvolatile flash-EEPROM memory array with source control transistors
ST MICROELECTRONICS SRL12 citations74
US10381173B2Aug 13, 2019
Microelectromechanical device, which can be used as non-volatile memory module or relay, and memory including a plurality of microelectromechanical devices
ST MICROELECTRONICS SRL2 citations73
US9865356B2Jan 9, 2018
Circuit and method for reading a memory cell of a non-volatile memory device
ST MICROELECTRONICS SRL3 citations73
SGS THOMSON MICROELECTRONICS
9 patentsUS5805500ASep 8, 1998
Circuit and method for generating a read reference signal for nonvolatile memory cells
SGS THOMSON MICROELECTRONICS85 citations96
US5729492AMar 17, 1998
Sense amplifier having capacitively coupled input for offset compensation
SGS THOMSON MICROELECTRONICS68 citations96
US5717636AFeb 10, 1998
EEPROM memory with contactless memory cells
SGS THOMSON MICROELECTRONICS85 citations96
US5748528AMay 5, 1998
EEPROM memory device with simultaneous read and write sector capabilities
SGS THOMSON MICROELECTRONICS81 citations94
US5886925AMar 23, 1999
Read circuit and method for nonvolatile memory cells with an equalizing structure
SGS THOMSON MICROELECTRONICS38 citations93
US6215329B1Apr 10, 2001
Output stage for a memory device and for low voltage applications
SGS THOMSON MICROELECTRONICS24 citations92
US6184741B1Feb 6, 2001
Bidirectional charge pump generating either a positive or negative voltage
SGS THOMSON MICROELECTRONICS52 citations92
US5793676AAug 11, 1998
Nonvolatile memory device having sectors of selectable size and number
SGS THOMSON MICROELECTRONICS21 citations91
US4949307AAug 14, 1990
Circuit for sensing the state of matrix cells in MOS EPROM memories including an offset current generator
SGS THOMSON MICROELECTRONICS18 citations74
SGS MICROELETTRONICA SPA
2 patentsLOSAVIO ALDO
1 patentTIZIANI FEDERICO
1 patentMICRON TECHNOLOGY INC
1 patentCAMPARDO GIOVANNI
1 patentShowing the top 50 of 101 patents by PatentIndex Score.