Inventor

ALPTEKIN EMRE

US84 patents

⚠️ This page may combine multiple inventors who share the name “ALPTEKIN EMRE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ALPTEKIN EMRE

IBM

Method for forming merged contact for semiconductor device

Contact first replacement metal gate

Formation of air-gap spacer in transistor

Selective dielectric spacer deposition for exposing sidewalls of a finFET

Silicide contacts having different shapes on regions of a semiconductor device

Raised trench metal semiconductor alloy formation

Tunnel transistors with abrupt junctions

Self aligned replacement metal source/drain finFET

Fin end spacer for preventing merger of raised active regions

Multi-composition gate dielectric field effect transistors

Fin field effect transistors having heteroepitaxial channels

FinFET device formation

Inducing channel strain via encapsulated silicide formation

Two-step silicide formation

Formation of metal resistor and e-fuse

Thermally stable salicide formation for salicide first contacts

Forming thermally stable salicide for salicide first contacts

Forming thermally stable salicide for salicide first contacts

Thermally stable salicide formation for salicide first contacts

Self aligned replacement metal source/drain finFET

FinFET with reduced parasitic capacitance

Contact first replacement metal gate

FinFET with reduced parasitic capacitance

FinFET device formation

Two-step silicide formation

Partial spacer for increasing self aligned contact process margins

Selective dielectric spacer deposition for exposing sidewalls of a finFET

Reliable gate contacts over active areas

APPLE INC

Leakage current reduction in electrical isolation gate structures

Leakage current reduction in electrical isolation gate structures

Leakage current reduction in electrical isolation gate structures

Backside contacts for signal routing

SRAM macro design architecture

Stacked SRAM cell architecture

Device structure for inducing layout dependent threshold voltage shift

GLOBALFOUNDRIES INC

Oxide mediated epitaxial nickel disilicide alloy contact formation

Oxide mediated epitaxial nickel disilicide alloy contact formation

Contact fill in an integrated circuit

Semiconductor devices with graphene nanoribbons

Anisotropic dielectric material gate spacer for a field effect transistor

Method and structure to suppress finFET heating

ALPTEKIN EMRE

Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device

Selective threshold voltage implants for long channel devices

Contact structures for semiconductor transistors

Two-step silicide formation

Raised silicide contact

VEGA REINALDO A

Method of fabricating tunnel transistors with abrupt junctions

INT BUSNIESS MACHINES CORPORATION

Reliable gate contacts over active areas

TESSERA LLC

Self aligned replacement metal source/drain FINFET

TESSERA INC

Self aligned replacement metal source/drain finFET