Inventor

HUANG JYUN-SIANG

TW23 patents

⚠️ This page may combine multiple inventors who share the name “HUANG JYUN-SIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG JYUN-SIANG

MACRONIX INT CO LTD

Operation methods for memory cell and array for reducing punch through leakage

Hot carrier programming in NAND flash

Composite impurity scheme for memory technologies

Memory apparatus and method thereof for operating memory

Word line driver circuitry and compact memory using same

Operation methods for memory cell and array thereof immune to punchthrough leakage

Electrically isolated gated diode nonvolatile memory

Method of fabricating memory structure

Multi level programmable memory structure

Semiconductor element having conductive damascene structures extending perpendicular to doping strips, and manufacturing method of the same

HUANG JYUN-SIANG

Hot carrier programming in NAND flash

Low voltage programming in NAND flash with two stage source side bias

Method for erasing memory array

Memory structure

Memory array and method for manufacturing and operating the same

Memory and manufacturing method thereof

TSAI PING-HUNG

Low voltage programming in NAND flash

Method of programming memory and memory apparatus utilizing the method

CHONG LIT-HO

Operation methods for memory cell and array for reducing punch through leakage

Operation methods for memory cell and array for reducing punch through leakage

TSAI WEN-JER

Memory array and method for programming memory array

YAN SHIH-GUEI

Non-volatile memory and fabricating method thereof

CHENG CHENG-HSIEN

Multi level programmable memory structure with multiple charge storage structures and fabricating method thereof