Inventor
KUSUMOTO OSAMU
JP48 patents
⚠️ This page may combine multiple inventors who share the name “KUSUMOTO OSAMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
24 patentsUS6995397B2Feb 7, 2006
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD114 citations98
US6101164AAug 8, 2000
High density recording by a conductive probe contact with phase change recording layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD119 citations98
US6989553B2Jan 24, 2006
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US5381753AJan 17, 1995
Fabrication method of fine structures
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD79 citations96
US7230273B2Jun 12, 2007
Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations93
US6995396B2Feb 7, 2006
Semiconductor substrate, semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US6864507B2Mar 8, 2005
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6690035B1Feb 10, 2004
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6674131B2Jan 6, 2004
Semiconductor power device for high-temperature applications
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6654604B2Nov 25, 2003
Equipment for communication system
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6617653B1Sep 9, 2003
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US5357109AOct 18, 1994
Probe for scanning tunneling microscope and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD48 citations93
US7220482B2May 22, 2007
Aligned fine particles, method for producing the same and device using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD38 citations91
US7217954B2May 15, 2007
Silicon carbide semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US6940127B2Sep 6, 2005
Equipment for communication system and semiconductor integrated circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6940110B2Sep 6, 2005
SiC-MISFET and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6580125B2Jun 17, 2003
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6504176B2Jan 7, 2003
Field effect transistor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6600203B2Jul 29, 2003
Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US7436031B2Oct 14, 2008
Device for implementing an inverter having a reduced size
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7381993B2Jun 3, 2008
High-breakdown-voltage insulated gate semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7214984B2May 8, 2007
High-breakdown-voltage insulated gate semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6900483B2May 31, 2005
Semiconductor device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63
US5835312ANov 10, 1998
Magnetic head for use with a recording medium
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
PANASONIC CORP
14 patentsUS7507999B2Mar 24, 2009
Semiconductor device and method for manufacturing same
PANASONIC CORP133 citations98
US7473929B2Jan 6, 2009
Semiconductor device and method for fabricating the same
PANASONIC CORP23 citations92
US7791308B2Sep 7, 2010
Semiconductor element and electrical apparatus
PANASONIC CORP14 citations84
US7786565B2Aug 31, 2010
Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor
PANASONIC CORP8 citations84
US7709403B2May 4, 2010
Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
PANASONIC CORP11 citations84
US7671409B2Mar 2, 2010
Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence
PANASONIC CORP18 citations84
US7462540B2Dec 9, 2008
Silicon carbide semiconductor device and process for producing the same
PANASONIC CORP7 citations74
US7829374B2Nov 9, 2010
Silicon carbide semiconductor device and method for manufacturing the same
PANASONIC CORP7 citations72
US7982224B2Jul 19, 2011
Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration
PANASONIC CORP3 citations63
US7964911B2Jun 21, 2011
Semiconductor element and electrical apparatus
PANASONIC CORP4 citations63
US7816688B2Oct 19, 2010
Semiconductor device and production method therefor
PANASONIC CORP2 citations63
US7772098B2Aug 10, 2010
Method for manufacturing semiconductor device
PANASONIC CORP2 citations63
US9209262B2Dec 8, 2015
Silicon carbide semiconductor device and method for manufacturing same
PANASONIC CORP2 citations62
US7846828B2Dec 7, 2010
Semiconductor device and method for fabricating the same
PANASONIC CORP1 citations52
PANASONIC IP MAN CO LTD
7 patentsUS9865591B2Jan 9, 2018
Silicon carbide semiconductor device
PANASONIC IP MAN CO LTD3 citations73
US9543858B2Jan 10, 2017
Semiconductor device and inverter using same
PANASONIC IP MAN CO LTD3 citations73
US9252211B2Feb 2, 2016
Semiconductor device and manufacturing method thereof
PANASONIC IP MAN CO LTD4 citations73
US9923090B2Mar 20, 2018
Silicon carbide semiconductor element and method for manufacturing the same
PANASONIC IP MAN CO LTD2 citations72
US9985125B1May 29, 2018
Silicon carbide semiconductor device
PANASONIC IP MAN CO LTD6 citations68
USRE49195EAug 30, 2022
Silicon carbide semiconductor device
PANASONIC IP MAN CO LTD0 citations62
US9985128B2May 29, 2018
Semiconductor device
PANASONIC IP MAN CO LTD0 citations40