P

Inventor

BAEK SANGHOON

KR48 patents
⚠️ This page may combine multiple inventors who share the name “BAEK SANGHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

39 patents
US9887210B2Feb 6, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD27 citations93
US9773772B2Sep 26, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US10050058B2Aug 14, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations83
US9449970B2Sep 20, 2016

Semiconductor devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US11842964B2Dec 12, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations74
US11755809B2Sep 12, 2023

Integrated circuit including asymmetric power line and method of designing the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US11329039B2May 10, 2022

Integrated circuit including integrated standard cell structure

SAMSUNG ELECTRONICS CO LTD4 citations73
US11302636B2Apr 12, 2022

Semiconductor device and manufacturing method of the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10026688B2Jul 17, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US9640444B2May 2, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US12131999B2Oct 29, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations72
US10541243B2Jan 21, 2020

Semiconductor device including a gate electrode and a conductive structure

SAMSUNG ELECTRONICS CO LTD4 citations72
US10096520B2Oct 9, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US10037401B2Jul 31, 2018

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US9929023B2Mar 27, 2018

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US9646960B2May 9, 2017

System-on-chip devices and methods of designing a layout therefor

SAMSUNG ELECTRONICS CO LTD4 citations72
US9536946B2Jan 3, 2017

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US9496179B2Nov 15, 2016

Method of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations72
US10242984B2Mar 26, 2019

Semiconductor devices and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US12218121B2Feb 4, 2025

Semiconductor devices having improved layout designs, and methods of designing and fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US11854976B2Dec 26, 2023

Methods of designing and fabricating a semiconductor device based on determining a least common multiple between select layout pitches

SAMSUNG ELECTRONICS CO LTD0 citations62
US11695002B2Jul 4, 2023

Integrated circuit including integrated standard cell structure

SAMSUNG ELECTRONICS CO LTD0 citations62
US11462475B2Oct 4, 2022

Semiconductor device with stacked wirings having respective pitches and ratios therebetween

SAMSUNG ELECTRONICS CO LTD0 citations62
US11404443B2Aug 2, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations62
US12307185B2May 20, 2025

Integrated circuit providing increased pin access points and method of designing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12034008B2Jul 9, 2024

Semiconductor device having active fin pattern at cell boundary

SAMSUNG ELECTRONICS CO LTD1 citations61
US11705456B2Jul 18, 2023

Semiconductor device having active fin pattern at cell boundary

SAMSUNG ELECTRONICS CO LTD0 citations61
US11810920B2Nov 7, 2023

Integrated circuits including integrated standard cell structure

SAMSUNG ELECTRONICS CO LTD1 citations60
US12147751B2Nov 19, 2024

Integrated circuit and method of designing the same

SAMSUNG ELECTRONICS CO LTD0 citations58
US12453184B2Oct 21, 2025

Integrated circuit including standard cells and method of designing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12406904B2Sep 2, 2025

Integrated circuit device including normal cells and through via supplying backside power to frontside power gating cell

SAMSUNG ELECTRONICS CO LTD0 citations51
US12159834B2Dec 3, 2024

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations51
US12068315B2Aug 20, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
USRE49780EJan 2, 2024

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US11764201B2Sep 19, 2023

Integrated circuit including standard cells

SAMSUNG ELECTRONICS CO LTD0 citations51
US10217647B2Feb 26, 2019

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12019965B2Jun 25, 2024

Integrated circuit including standard cell and method of manufacturing the integrated circuit

SAMSUNG ELECTRONICS CO LTD0 citations49
US12426361B2Sep 23, 2025

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations45
US11626516B2Apr 11, 2023

Integrated circuitry including vertical channel structure and layout method of the same

SAMSUNG ELECTRONICS CO LTD0 citations45

BAEK SANGHOON

2 patents

SONG TAEJOONG

2 patents

PARK PANJAE

1 patent

LEE TAE-KYEONG

1 patent

LEE JAEYONG

1 patent

CT ADVANCED SOFT ELECTRONICS

1 patent

IBM

1 patent