P

Inventor

SONG TAEJOONG

KR38 patents
⚠️ This page may combine multiple inventors who share the name “SONG TAEJOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US9887210B2Feb 6, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD27 citations93
US10622999B2Apr 14, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations83
US10505546B2Dec 10, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations83
US10050058B2Aug 14, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations83
US9449970B2Sep 20, 2016

Semiconductor devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US10431300B2Oct 1, 2019

Nonvolatile memory device and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD8 citations82
US9496027B2Nov 15, 2016

Static random access memory device including write assist circuit and writing method thereof

SAMSUNG ELECTRONICS CO LTD15 citations82
US9640444B2May 2, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10541243B2Jan 21, 2020

Semiconductor device including a gate electrode and a conductive structure

SAMSUNG ELECTRONICS CO LTD4 citations72
US10096520B2Oct 9, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US10037401B2Jul 31, 2018

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US9929023B2Mar 27, 2018

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US9767248B2Sep 19, 2017

Semiconductor having cross coupled structure and layout verification method thereof

SAMSUNG ELECTRONICS CO LTD2 citations72
US9646960B2May 9, 2017

System-on-chip devices and methods of designing a layout therefor

SAMSUNG ELECTRONICS CO LTD4 citations72
US9536946B2Jan 3, 2017

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11581038B2Feb 14, 2023

Semiconductor device for selectively performing isolation function and layout displacement method thereof

SAMSUNG ELECTRONICS CO LTD2 citations71
US10720909B2Jul 21, 2020

Flip-flop including 3-state inverter

SAMSUNG ELECTRONICS CO LTD2 citations71
US10411677B2Sep 10, 2019

Flip-flop including 3-state inverter

SAMSUNG ELECTRONICS CO LTD3 citations71
US10192618B2Jan 29, 2019

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD2 citations71
US11404443B2Aug 2, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11323119B2May 3, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11101803B2Aug 24, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US10593402B2Mar 17, 2020

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD1 citations61
US9524772B2Dec 20, 2016

Memory device of a single-ended bitline structure including reference voltage generator

SAMSUNG ELECTRONICS CO LTD2 citations61
US11183233B2Nov 23, 2021

Semiconductor device for selectively performing isolation function and layout displacement method thereof

SAMSUNG ELECTRONICS CO LTD0 citations60
US12453184B2Oct 21, 2025

Integrated circuit including standard cells and method of designing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
USRE49780EJan 2, 2024

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10217647B2Feb 26, 2019

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US11854610B2Dec 26, 2023

Semiconductor device for selectively performing isolation function and layout displacement method thereof

SAMSUNG ELECTRONICS CO LTD0 citations50
US10453521B2Oct 22, 2019

Layout of semiconductor device for selectively operating as insulating circuit or driving circuit

SAMSUNG ELECTRONICS CO LTD0 citations50
US10134486B2Nov 20, 2018

Memory device including a redundancy column and a redundancy peripheral logic circuit

SAMSUNG ELECTRONICS CO LTD0 citations48

BAEK SANGHOON

2 patents

SAMSUNG ELECTRO MECH

2 patents

SONG TAEJOONG

2 patents

CHA JEONGWON

1 patent