Inventor
YANG CHENG-YU
TW37 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHENG-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS9997631B2Jun 12, 2018
Methods for reducing contact resistance in semiconductors manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US11456383B2Sep 27, 2022
Semiconductor device having a contact plug with an air gap spacer
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10985167B2Apr 20, 2021
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10867870B1Dec 15, 2020
Semiconductor device with funnel shape spacer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10529725B2Jan 7, 2020
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10483266B2Nov 19, 2019
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283624B1May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10141231B1Nov 27, 2018
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10037923B1Jul 31, 2018
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11856743B2Dec 26, 2023
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9865595B1Jan 9, 2018
FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12426346B2Sep 23, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051628B2Jul 30, 2024
Semiconductor device with funnel shape spacer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11488874B2Nov 1, 2022
Semiconductor device with funnel shape spacer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11217486B2Jan 4, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11152486B2Oct 19, 2021
FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12432963B2Sep 30, 2025
Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408315B2Sep 2, 2025
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12362187B2Jul 15, 2025
Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237231B2Feb 25, 2025
FINFET device with wrapped-around epitaxial structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901455B2Feb 13, 2024
Method of manufacturing a FinFET by implanting a dielectric with a dopant
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11133229B2Sep 28, 2021
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11062957B2Jul 13, 2021
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10811262B2Oct 20, 2020
Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10535525B2Jan 14, 2020
Method for forming semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10535569B2Jan 14, 2020
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10103146B2Oct 16, 2018
FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9570613B2Feb 14, 2017
Structure and formation method of FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9496264B2Nov 15, 2016
Structure and formation method of FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY
5 patentsUS11951578B1Apr 9, 2024
Cutting fluid digital monitoring management system and method
UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY5 citations68
US11965540B2Apr 23, 2024
Hand tool for bolts fastening
UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY0 citations50
US11969815B2Apr 30, 2024
Automatic material changing and welding system and method for stamping materials
UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY0 citations47
US12356064B2Jul 8, 2025
Measurement assistance system and method
UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY0 citations45
US11173637B2Nov 16, 2021
Forming mold with linkage type lateral auxiliary pressurization
UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY0 citations40