P

Inventor

YANG CHENG-YU

TW37 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHENG-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

29 patents
US9997631B2Jun 12, 2018

Methods for reducing contact resistance in semiconductors manufacturing process

TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US11456383B2Sep 27, 2022

Semiconductor device having a contact plug with an air gap spacer

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10985167B2Apr 20, 2021

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10867870B1Dec 15, 2020

Semiconductor device with funnel shape spacer and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10529725B2Jan 7, 2020

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10483266B2Nov 19, 2019

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283624B1May 7, 2019

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10141231B1Nov 27, 2018

FinFET device with wrapped-around epitaxial structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10037923B1Jul 31, 2018

Forming transistor by selectively growing gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11856743B2Dec 26, 2023

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9865595B1Jan 9, 2018

FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12426346B2Sep 23, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051628B2Jul 30, 2024

Semiconductor device with funnel shape spacer and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11488874B2Nov 1, 2022

Semiconductor device with funnel shape spacer and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11217486B2Jan 4, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11152486B2Oct 19, 2021

FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12432963B2Sep 30, 2025

Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408315B2Sep 2, 2025

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12362187B2Jul 15, 2025

Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237231B2Feb 25, 2025

FINFET device with wrapped-around epitaxial structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901455B2Feb 13, 2024

Method of manufacturing a FinFET by implanting a dielectric with a dopant

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11133229B2Sep 28, 2021

Forming transistor by selectively growing gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11062957B2Jul 13, 2021

FinFET device with wrapped-around epitaxial structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10811262B2Oct 20, 2020

Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10535525B2Jan 14, 2020

Method for forming semiconductor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10535569B2Jan 14, 2020

Forming transistor by selectively growing gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10103146B2Oct 16, 2018

FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9570613B2Feb 14, 2017

Structure and formation method of FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9496264B2Nov 15, 2016

Structure and formation method of FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

UNIV NAT KAOHSIUNG SCIENCE & TECHNOLOGY

5 patents

INNOLUX CORP

1 patent

CHIPMOS TECHNOLOGIES INC

1 patent

NAT KAOHSIUNG FIRST UNIV OF SCIENCE AND TECH

1 patent