Inventor

SHIRAI KOJI

JP28 patents

⚠️ This page may combine multiple inventors who share the name “SHIRAI KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIRAI KOJI

TOSHIBA KK

FET having gate insulating films whose thickness is different depending on portions

Double diffused mosfet

MOS transistor with high breakdown voltage

Semiconductor device IC with DMOS using self-aligned back gate region

Semiconductor device having a reduced parasitic capacitance bonding pad structure

Semiconductor package having reinforced lead pins

Lateral MOSFET

Dual anode mos scr with anti crosstalk collecting region

Semiconductor device with latch-up prevention structure

Method of manufacturing a semiconductor device

Mos-type integrated circuit

Method of manufacturing double diffused mosfet with potential biases

Semiconductor device

Double diffused mosfet with potential biases

Semiconductor memory device

Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product

Semiconductor device having improved withstanding voltage characteristics

Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product

SHIRAI KOJI

Semiconductor device

Semiconductor device

Semiconductor device and method for manufacturing the same

NEC CORP

Portable radio communication apparatus with improved power-saving function

Method of determining electric field state of mobile station also in view of electric field state of uplink

HENKEL AG & CO KGAA

Hot melt composition

Hot melt composition

NAKAMURA YUKI

Semiconductor device having on a substrate a diode formed by making use of a DMOS structure

HITACHI SHIPBUILDING ENG CO

Method to prevent stress corrosion cracking of storage canister and storage canister

KOMATSU KANAKO

Semiconductor device