P

Inventor

LOJEK BOHUMIL

US43 patents
⚠️ This page may combine multiple inventors who share the name “LOJEK BOHUMIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ATMEL CORP

40 patents
US6846709B1Jan 25, 2005

Vertical gate CMOS with lithography-independent gate length

ATMEL CORP60 citations96
US7101760B1Sep 5, 2006

Charge trapping nanocrystal dielectric for non-volatile memory transistor

ATMEL CORP20 citations92
US7092288B2Aug 15, 2006

Non-volatile memory array with simultaneous write and erase feature

ATMEL CORP19 citations92
US6933557B2Aug 23, 2005

Fowler-Nordheim block alterable EEPROM memory cell

ATMEL CORP19 citations92
US6831325B2Dec 14, 2004

Multi-level memory cell with lateral floating spacers

ATMEL CORP16 citations92
US6690059B1Feb 10, 2004

Nanocrystal electron device

ATMEL CORP53 citations92
US6479351B1Nov 12, 2002

Method of fabricating a self-aligned non-volatile memory cell

ATMEL CORP19 citations92
US6369422B1Apr 9, 2002

Eeprom cell with asymmetric thin window

ATMEL CORP21 citations92
US7253057B1Aug 7, 2007

Memory cell with reduced size and standby current

ATMEL CORP10 citations84
US7020020B1Mar 28, 2006

Low voltage non-volatile memory cells using twin bit line current sensing

ATMEL CORP17 citations84
US6998670B2Feb 14, 2006

Twin EEPROM memory transistors with subsurface stepped floating gates

ATMEL CORP13 citations84
US6888192B2May 3, 2005

Mirror image non-volatile memory cell transistor pairs with single poly layer

ATMEL CORP16 citations84
US6624027B1Sep 23, 2003

Ultra small thin windows in floating gate transistors defined by lost nitride spacers

ATMEL CORP19 citations79
US7341916B2Mar 11, 2008

Self-aligned nanometer-level transistor defined without lithography

ATMEL CORP8 citations74
US7301197B2Nov 27, 2007

Non-volatile nanocrystal memory transistors using low voltage impact ionization

ATMEL CORP8 citations74
US7057235B2Jun 6, 2006

Mirror image memory cell transistor pairs featuring poly floating spacers

ATMEL CORP8 citations74
US6919242B2Jul 19, 2005

Mirror image memory cell transistor pairs featuring poly floating spacers

ATMEL CORP6 citations74
US6905926B2Jun 14, 2005

Method of making nonvolatile transistor pairs with shared control gate

ATMEL CORP10 citations74
US6486031B1Nov 26, 2002

Method of making an EEPROM cell with asymmetric thin window

ATMEL CORP9 citations74
US6841823B2Jan 11, 2005

Self-aligned non-volatile memory cell

ATMEL CORP6 citations73
US6624029B2Sep 23, 2003

Method of fabricating a self-aligned non-volatile memory cell

ATMEL CORP10 citations73
US7176112B2Feb 13, 2007

Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material

ATMEL CORP8 citations71
US6596604B1Jul 22, 2003

Method of preventing shift of alignment marks during rapid thermal processing

ATMEL CORP12 citations71
US7341911B2Mar 11, 2008

Method of making EEPROM transistor pairs for block alterable memory

ATMEL CORP2 citations63
US7338875B2Mar 4, 2008

Method of fabricating a semiconductor device having a toroidal-like junction

ATMEL CORP4 citations63
US7232732B2Jun 19, 2007

Semiconductor device with a toroidal-like junction

ATMEL CORP1 citations63
US7170128B2Jan 30, 2007

Multi-bit nanocrystal memory

ATMEL CORP3 citations63
US7169660B2Jan 30, 2007

Lithography-independent fabrication of small openings for forming vertical mos transistor

ATMEL CORP5 citations63
US7098106B2Aug 29, 2006

Method of making mirror image memory cell transistor pairs featuring poly floating spacers

ATMEL CORP4 citations63
US6822285B1Nov 23, 2004

EEPROM with multi-member floating gate

ATMEL CORP6 citations63
USRE40486ESep 9, 2008

Self-aligned non-volatile memory cell

ATMEL CORP1 citations62
US7391081B2Jun 24, 2008

Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device

ATMEL CORP0 citations52
US7348626B2Mar 25, 2008

Method of making nonvolatile transistor pairs with shared control gate

ATMEL CORP0 citations52
US7301794B2Nov 27, 2007

Non-volatile memory array with simultaneous write and erase feature

ATMEL CORP1 citations52
US7183180B2Feb 27, 2007

Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device

ATMEL CORP1 citations52
US7180126B2Feb 20, 2007

Multi-level memory cell array with lateral floating spacers

ATMEL CORP1 citations52
US7569458B2Aug 4, 2009

Non-thermally annealed doped semiconductor material and methods related thereto

ATMEL CORP0 citations50
US7554151B2Jun 30, 2009

Low voltage non-volatile memory cell with electrically transparent control gate

ATMEL CORP0 citations42
US7439567B2Oct 21, 2008

Contactless nonvolatile memory array

ATMEL CORP0 citations42
US7335943B2Feb 26, 2008

Ultrascalable vertical MOS transistor with planar contacts

ATMEL CORP0 citations42

CYPRESS SEMICONDUCTOR CORP

1 patent

MOTOROLA INC

1 patent

(unassigned)

1 patent