Inventor
LOJEK BOHUMIL
US43 patents
⚠️ This page may combine multiple inventors who share the name “LOJEK BOHUMIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ATMEL CORP
40 patentsUS6846709B1Jan 25, 2005
Vertical gate CMOS with lithography-independent gate length
ATMEL CORP60 citations96
US7101760B1Sep 5, 2006
Charge trapping nanocrystal dielectric for non-volatile memory transistor
ATMEL CORP20 citations92
US7092288B2Aug 15, 2006
Non-volatile memory array with simultaneous write and erase feature
ATMEL CORP19 citations92
US6933557B2Aug 23, 2005
Fowler-Nordheim block alterable EEPROM memory cell
ATMEL CORP19 citations92
US6831325B2Dec 14, 2004
Multi-level memory cell with lateral floating spacers
ATMEL CORP16 citations92
US6690059B1Feb 10, 2004
Nanocrystal electron device
ATMEL CORP53 citations92
US6479351B1Nov 12, 2002
Method of fabricating a self-aligned non-volatile memory cell
ATMEL CORP19 citations92
US6369422B1Apr 9, 2002
Eeprom cell with asymmetric thin window
ATMEL CORP21 citations92
US7253057B1Aug 7, 2007
Memory cell with reduced size and standby current
ATMEL CORP10 citations84
US7020020B1Mar 28, 2006
Low voltage non-volatile memory cells using twin bit line current sensing
ATMEL CORP17 citations84
US6998670B2Feb 14, 2006
Twin EEPROM memory transistors with subsurface stepped floating gates
ATMEL CORP13 citations84
US6888192B2May 3, 2005
Mirror image non-volatile memory cell transistor pairs with single poly layer
ATMEL CORP16 citations84
US6624027B1Sep 23, 2003
Ultra small thin windows in floating gate transistors defined by lost nitride spacers
ATMEL CORP19 citations79
US7341916B2Mar 11, 2008
Self-aligned nanometer-level transistor defined without lithography
ATMEL CORP8 citations74
US7301197B2Nov 27, 2007
Non-volatile nanocrystal memory transistors using low voltage impact ionization
ATMEL CORP8 citations74
US7057235B2Jun 6, 2006
Mirror image memory cell transistor pairs featuring poly floating spacers
ATMEL CORP8 citations74
US6919242B2Jul 19, 2005
Mirror image memory cell transistor pairs featuring poly floating spacers
ATMEL CORP6 citations74
US6905926B2Jun 14, 2005
Method of making nonvolatile transistor pairs with shared control gate
ATMEL CORP10 citations74
US6486031B1Nov 26, 2002
Method of making an EEPROM cell with asymmetric thin window
ATMEL CORP9 citations74
US6841823B2Jan 11, 2005
Self-aligned non-volatile memory cell
ATMEL CORP6 citations73
US6624029B2Sep 23, 2003
Method of fabricating a self-aligned non-volatile memory cell
ATMEL CORP10 citations73
US7176112B2Feb 13, 2007
Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
ATMEL CORP8 citations71
US6596604B1Jul 22, 2003
Method of preventing shift of alignment marks during rapid thermal processing
ATMEL CORP12 citations71
US7341911B2Mar 11, 2008
Method of making EEPROM transistor pairs for block alterable memory
ATMEL CORP2 citations63
US7338875B2Mar 4, 2008
Method of fabricating a semiconductor device having a toroidal-like junction
ATMEL CORP4 citations63
US7232732B2Jun 19, 2007
Semiconductor device with a toroidal-like junction
ATMEL CORP1 citations63
US7170128B2Jan 30, 2007
Multi-bit nanocrystal memory
ATMEL CORP3 citations63
US7169660B2Jan 30, 2007
Lithography-independent fabrication of small openings for forming vertical mos transistor
ATMEL CORP5 citations63
US7098106B2Aug 29, 2006
Method of making mirror image memory cell transistor pairs featuring poly floating spacers
ATMEL CORP4 citations63
US6822285B1Nov 23, 2004
EEPROM with multi-member floating gate
ATMEL CORP6 citations63
USRE40486ESep 9, 2008
Self-aligned non-volatile memory cell
ATMEL CORP1 citations62
US7391081B2Jun 24, 2008
Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
ATMEL CORP0 citations52
US7348626B2Mar 25, 2008
Method of making nonvolatile transistor pairs with shared control gate
ATMEL CORP0 citations52
US7301794B2Nov 27, 2007
Non-volatile memory array with simultaneous write and erase feature
ATMEL CORP1 citations52
US7183180B2Feb 27, 2007
Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
ATMEL CORP1 citations52
US7180126B2Feb 20, 2007
Multi-level memory cell array with lateral floating spacers
ATMEL CORP1 citations52
US7569458B2Aug 4, 2009
Non-thermally annealed doped semiconductor material and methods related thereto
ATMEL CORP0 citations50
US7554151B2Jun 30, 2009
Low voltage non-volatile memory cell with electrically transparent control gate
ATMEL CORP0 citations42
US7439567B2Oct 21, 2008
Contactless nonvolatile memory array
ATMEL CORP0 citations42
US7335943B2Feb 26, 2008
Ultrascalable vertical MOS transistor with planar contacts
ATMEL CORP0 citations42