Inventor

MIENO FUMITAKE

CN53 patents

⚠️ This page may combine multiple inventors who share the name “MIENO FUMITAKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIENO FUMITAKE

FUJITSU LTD

Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof

Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers

Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow

Semiconductor device manufacturing apparatus and its cleaning method

Method of growing a single crystalline β-SiC layer on a silicon substrate

Method of selectively depositing tungsten upon a semiconductor substrate

Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate

Semiconductor device having a region doped to a level exceeding the solubility limit

Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit

Semiconductor device having a region doped to a level exceeding the solubility limit

Silicon carbide barrier between silicon substrate and metal layer

Method for fabricating bipolar-MOS devices

Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof

An integrated semiconductor device having a buried semiconductor layer and fabrication method thereof

Method of fabricating an x-ray exposure mask

Method of forming tungsten film

Graphite columnar heating body for semiconductor wafer heating

Chemical vapor deposition system

Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof

MIENO FUMITAKE

Semiconductor device and manufacturing method thereof

Transistor and method for forming the same

Semiconductor device and manufacturing method thereof

Method of forming TFT floating gate memory cell structures

Atomic layer deposition epitaxial silicon growth for TFT flash memory cell

Method for fabricating a phase change memory

Semiconductor device and manufacturing method thereof

Transistor and method for forming the same

Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof

TFT MONOS or SONOS memory cell structures

Phase change memory and method for fabricating the same

Semiconductor device and related manufacturing method

TFT SAS memory cell structures

SEMICONDUCTOR MFG INT SHANGHAI

Fin-type field effect transistor and manufacturing method thereof

Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices

Method for fabricating landing polysilicon contact structures for semiconductor devices

Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices

Atomic layer deposition method and semiconductor device formed by the same

TFT floating gate memory cell structures

Method of epitaxially growing silicon by atomic layer deposition for TFT flash memory cell

SEMICONDUCTOR MFG INT SHANGHAI CORP

Segregated FinFET structure and manufacturing method

Metal gate stack structure and manufacturing method

Semiconductor channel-stop layer and method of manufacturing the same

SEMICONDUCTOR MFG INT CORP

Fin field effect transistor and fabrication method

Semicondcutor device comprising transistor

Phase change memory

JI HUA

Atomic layer deposition method and semiconductor device formed by the same

Atomic layer deposition method and semiconductor device formed by the same

SEMICONDUCTOR MFG INT BEIJING CORP

Resistive random access memory device and manufacturing methods

DAINIPPON SCREEN MFG

Method and vessel for storing a substrate cleaning brush

GAO DAVID

Application of millisecond heating source for surface treatment