Inventor · disambiguated record
Kaoru Narita
Also filed as: NARITA KAORU
41 granted patents·6 pending applications·701 citations·filing 1991–2024
98Inventor score
Top patents by PatentIndex Score
47 records- 0198US7952365B2Resonator, printed board, and method for measuring complex dielectric constantNEC CORP·Filed 2006·Granted May 31, 2011·110 cites·13 claims
- 0293US7868257B2Via transmission lines for multilayer printed circuit boardsNEC CORP·Filed 2005·Granted Jan 11, 2011·28 cites·46 claims
- 0392US8035992B2Vertical transitions, printed circuit boards therewith and semiconductor packages with the printed circuit boards and semiconductor chipNEC CORP·Filed 2006·Granted Oct 11, 2011·25 cites·27 claims
- 0490US7750765B2Compact via transmission line for printed circuit board and design method of the sameNEC CORP·Filed 2008·Granted Jul 6, 2010·14 cites·11 claims
- 0587US8085112B2Broadband transition from a via interconnection to a planar transmission line in a multilayer substrateKUSHTA TARAS·Filed 2011·Granted Dec 27, 2011·8 cites·3 claims
- 0684US7463122B2Compact via transmission line for printed circuit board and its designing methodNEC CORP·Filed 2004·Granted Dec 9, 2008·26 cites·12 claims
- 0782US5449939ASemiconductor device having a protective transistorNEC CORP·Filed 1994·Granted Sep 12, 1995·55 cites·6 claims
- 0880US5717559AInput/output protection device for use in semiconductor deviceNEC CORP·Filed 1996·Granted Feb 10, 1998·48 cites·19 claims
- 0976US5170232AMOS field-effect transistor with sidewall spacersNEC CORP·Filed 1991·Granted Dec 8, 1992·42 cites·5 claims
- 1073US5307310ASemiconductor memory having stacked capacitors and MOS transistorsNEC CORP·Filed 1991·Granted Apr 26, 1994·36 cites·16 claims
- 1169US5923079ASingle-chip system having electrostatic discharge (ESD) protective circuitry including a single bipolar transistor portionNEC CORP·Filed 1997·Granted Jul 13, 1999·28 cites·17 claims
- 1268US8101529B2Carbon nanotube resistor, semiconductor device, and manufacturing method thereofNARITA KAORU·Filed 2008·Granted Jan 24, 2012·5 cites·12 claims
- 1368US5859451ASemiconductor memory having storage capacitor connected to diffusion region through barrier layerNEC CORP·Filed 1991·Granted Jan 12, 1999·27 cites·4 claims
- 1464US8013685B2Broadband transition from a via interconnection to a planar transmission line in a multilayer substrateRENESAS ELECTRONICS CORP·Filed 2007·Granted Sep 6, 2011·2 cites·15 claims
- 1564US5844281ASemiconductor integrated circuit device with electrostatic protective functionNEC CORP·Filed 1996·Granted Dec 1, 1998·24 cites·10 claims
- 1662US5710452ASemiconductor device having electrostatic breakdown protection circuitNEC CORP·Filed 1996·Granted Jan 20, 1998·22 cites·6 claims
- 1760US6081013ASemiconductor device having a reduced distance between the input resistor and the internal circuitNEC CORP·Filed 1998·Granted Jun 27, 2000·16 cites·5 claims
- 1860US5910675ASemiconductor device and method of making the sameNEC CORP·Filed 1996·Granted Jun 8, 1999·17 cites·17 claims
- 1958US2024298545A1Piezoelectric structureTDK CORP·Filed 2024·Application pending·0 cites
- 2057US5706156ASemiconductor device having an ESD protective circuitryNEC CORP·Filed 1996·Granted Jan 6, 1998·17 cites·18 claims
- 2156US12356754B2Infrared sensor using carbon nanotubes and method for manufacturing sameNEC CORP·Filed 2020·Granted Jul 8, 2025·0 cites·16 claims
- 2256US6433393B1Semiconductor protective device and method for manufacturing sameNEC CORP·Filed 2000·Granted Aug 13, 2002·7 cites·12 claims
- 2356US5828107ASemiconductor integrated circuit deviceNEC CORP·Filed 1996·Granted Oct 27, 1998·16 cites·10 claims
- 2455US2024298118A1Acoustic deviceTDK CORP·Filed 2024·Application pending·0 cites
- 2554US11417881B2Lithium-manganese complex oxide and method for producing sameAIST·Filed 2017·Granted Aug 16, 2022·0 cites·17 claims
- 2650US5973901ASemiconductor circuit device with high electrostatic breakdown enduranceNEC CORP·Filed 1997·Granted Oct 26, 1999·10 cites·6 claims
- 2749US5559362ASemiconductor device having double metal connection layers connected to each other and to the substrate in the scribe line areaNEC CORP·Filed 1994·Granted Sep 24, 1996·16 cites·12 claims
- 2848US6777723B1Semiconductor device having protection circuit implemented by bipolar transistor for discharging static charge current and process of fabricationNEC CORP·Filed 1999·Granted Aug 17, 2004·14 cites·29 claims
- 2947US6191633B1Semiconductor integrated circuit with protection circuit against electrostatic dischargeNEC CORP·Filed 1998·Granted Feb 20, 2001·10 cites·16 claims
- 3047US5724219AElectrostatic protection circuit comprising plurality of protective elementsNEC CORP·Filed 1996·Granted Mar 3, 1998·10 cites·3 claims
- 3146US10215588B2Position detecting device and structure for using position detecting deviceTDK CORP·Filed 2016·Granted Feb 26, 2019·0 cites·9 claims
- 3246US5875086ASemiconductor integrated circuit device equipped with protective system for directly discharging surge voltage from pad to discharge lineNEC CORP·Filed 1996·Granted Feb 23, 1999·10 cites·15 claims
- 3345US5953191AProtection circuit against electrostatic charge applied between power supply terminals for preventing internal circuit therefrom regardless of polarity thereofNEC CORP·Filed 1998·Granted Sep 14, 1999·9 cites·13 claims
- 3445US5936283AMOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layerNEC CORP·Filed 1997·Granted Aug 10, 1999·11 cites·10 claims
- 3542US7902938B2Data transmitter, data transmission line, and data transmission methodNEC CORP·Filed 2005·Granted Mar 8, 2011·0 cites·16 claims
- 3642US2020321588A1Stacked secondary battery and bag-like separatorNEC CORP·Filed 2017·Application pending·0 cites
- 3741US5256564AMethod for manufacturing semiconductor device having a contact structureNEC CORP·Filed 1992·Granted Oct 26, 1993·11 cites·16 claims
- 3841US2011260293A1Variable capacitance device and method of fabricating the sameNARITA KAORU·Filed 2009·Application pending·0 cites
- 3939US6175139B1Semiconductor device and method of making the sameNEC CORP·Filed 1998·Granted Jan 16, 2001·5 cites·8 claims
- 4038US5521413ASemiconductor device having a solid metal wiring with a contact portion for improved protectionNEC CORP·Filed 1994·Granted May 28, 1996·8 cites·7 claims
- 4137US5689120AMOS field effect transistor in a dynamic random access memory device and method for fabricating the sameNEC CORP·Filed 1996·Granted Nov 18, 1997·5 cites·2 claims
- 4235US5436487AOutput circuit having three power supply linesNEC CORP·Filed 1994·Granted Jul 25, 1995·3 cites·14 claims
- 4335US2017122777A1Magnetic position detection deviceTDK CORP·Filed 2015·Application pending·0 cites
- 4435US2013002394A1Bolometer and method of manufacturing the sameNARITA KAORU·Filed 2011·Application pending·0 cites
- 4534US6275367B1Semiconductor circuit device with high electrostatic breakdown enduranceNEC CORP·Filed 1999·Granted Aug 14, 2001·2 cites·11 claims
- 4633US5869871ASemiconductor device capable of avoiding damage by ESDNEC CORP·Filed 1997·Granted Feb 9, 1999·2 cites·14 claims
- 4732US6101078ASemiconductor device with protection circuitNEC CORP·Filed 1998·Granted Aug 8, 2000·2 cites·27 claims
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