Inventor
LEE YUEH-CHUAN
TW46 patents
⚠️ This page may combine multiple inventors who share the name “LEE YUEH-CHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS9761623B2Sep 12, 2017
Backside illuminated (BSI) image sensor with a reflector
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9318630B2Apr 19, 2016
Pixel with raised photodiode structure
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10170517B2Jan 1, 2019
Method for forming image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations69
US12363459B2Jul 15, 2025
Photosensing pixel including self-aligned light shielding layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12507491B2Dec 23, 2025
Storage node light shield for pixel of image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12113079B2Oct 8, 2024
Image sensor with shallow trench edge doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046614B2Jul 23, 2024
Apparatus and methods for effective impurity gettering
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735609B2Aug 22, 2023
Image sensor with shallow trench edge doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158591B2Oct 26, 2021
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11139212B2Oct 5, 2021
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998359B2May 4, 2021
Image sensor with shallow trench edge doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998360B2May 4, 2021
Image sensor with shallow trench edge doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133340B2Sep 28, 2021
Device comprising photodiode and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10734339B2Aug 4, 2020
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714516B2Jul 14, 2020
Image sensor with shallow trench edge doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10672810B2Jun 2, 2020
CMOS image sensor with shallow trench edge doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276524B2Apr 30, 2019
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10014269B2Jul 3, 2018
Method for wafer dicing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9748187B2Aug 29, 2017
Wafer structure and method for wafer dicing
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9502463B2Nov 22, 2016
Method for fabricating image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9368543B2Jun 14, 2016
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9748290B2Aug 29, 2017
Mechanisms for forming image sensor with lateral doping gradient
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US10879123B2Dec 29, 2020
Protected chip-scale package (CSP) pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10515989B2Dec 24, 2019
Device comprising photodiode and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10510606B2Dec 17, 2019
Protected chip-scale package (CSP) pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10276441B2Apr 30, 2019
Protected chip-scale package (CSP) pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US9748150B2Aug 29, 2017
Test line structure and method for performing wafer acceptance test
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations45
US9859325B2Jan 2, 2018
Complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US9721987B2Aug 1, 2017
Pixel with transistor gate covering photodiode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US10163952B2Dec 25, 2018
Backside illuminated image sensor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations37
PROMOS TECHNOLOGIES INC
11 patentsUS6855610B2Feb 15, 2005
Method of forming self-aligned contact structure with locally etched gate conductive layer
PROMOS TECHNOLOGIES INC375 citations98
US6821842B1Nov 23, 2004
[DRAM structure and fabricating method thereof]
PROMOS TECHNOLOGIES INC21 citations92
US6680237B2Jan 20, 2004
Method of manufacturing deep trench capacitor
PROMOS TECHNOLOGIES INC22 citations89
US7098102B2Aug 29, 2006
Shallow trench isolation structure and dynamic random access memory, and fabricating methods thereof
PROMOS TECHNOLOGIES INC8 citations74
US7009238B2Mar 7, 2006
Deep-trench capacitor with hemispherical grain silicon surface and method for making the same
PROMOS TECHNOLOGIES INC6 citations73
US6849529B2Feb 1, 2005
Deep-trench capacitor with hemispherical grain silicon surface and method for making the same
PROMOS TECHNOLOGIES INC8 citations73
US7034354B2Apr 25, 2006
Semiconductor structure with lining layer partially etched on sidewall of the gate
PROMOS TECHNOLOGIES INC4 citations62
US6987044B2Jan 17, 2006
Volatile memory structure and method for forming the same
PROMOS TECHNOLOGIES INC3 citations62
US6953961B2Oct 11, 2005
DRAM structure and fabricating method thereof
PROMOS TECHNOLOGIES INC4 citations62
US7241659B2Jul 10, 2007
Volatile memory devices and methods for forming same
PROMOS TECHNOLOGIES INC2 citations57
US7320912B2Jan 22, 2008
Trench capacitors with buried isolation layer formed by an oxidation process and methods for manufacturing the same
PROMOS TECHNOLOGIES INC0 citations41
NAT SCIENCE COUNCIL
4 patentsUS6486057B1Nov 26, 2002
Process for preparing Cu damascene interconnection
NAT SCIENCE COUNCIL24 citations92
US6294832B1Sep 25, 2001
Semiconductor device having structure of copper interconnect/barrier dielectric liner/low-k dielectric trench and its fabrication method
NAT SCIENCE COUNCIL42 citations89
US6774461B2Aug 10, 2004
Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
NAT SCIENCE COUNCIL10 citations68
US6903029B2Jun 7, 2005
Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
NAT SCIENCE COUNCIL0 citations47