Inventor
KEECH RYAN
US18 patents
Patents
18 patentsUS11328988B2May 10, 2022
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
INTEL CORP2 citations73
US11164785B2Nov 2, 2021
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material
INTEL CORP2 citations73
US11610889B2Mar 21, 2023
Arsenic-doped epitaxial, source/drain regions for NMOS
INTEL CORP3 citations72
US11244943B2Feb 8, 2022
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
INTEL CORP2 citations72
US11804523B2Oct 31, 2023
High aspect ratio source or drain structures with abrupt dopant profile
INTEL CORP3 citations71
US11552169B2Jan 10, 2023
Source or drain structures with phosphorous and arsenic co-dopants
INTEL CORP2 citations71
US12388011B2Aug 12, 2025
Top gate recessed channel CMOS thin film transistor and methods of fabrication
INTEL CORP0 citations62
US11996404B2May 28, 2024
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
INTEL CORP0 citations62
US11929320B2Mar 12, 2024
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
INTEL CORP0 citations62
US11482621B2Oct 25, 2022
Vertically stacked CMOS with upfront M0 interconnect
INTEL CORP0 citations62
US12342574B2Jun 24, 2025
Contact resistance reduction in transistor devices with metallization on both sides
INTEL CORP0 citations61
US12119387B2Oct 15, 2024
Low resistance approaches for fabricating contacts and the resulting structures
INTEL CORP1 citations61
US12094881B2Sep 17, 2024
Arsenic-doped epitaxial source/drain regions for NMOS
INTEL CORP0 citations61
US12288808B2Apr 29, 2025
High aspect ratio source or drain structures with abrupt dopant profile
INTEL CORP0 citations60
US12342611B2Jun 24, 2025
Source or drain structures with vertical trenches
INTEL CORP0 citations59
US11935887B2Mar 19, 2024
Source or drain structures with vertical trenches
INTEL CORP1 citations59
US12266570B2Apr 1, 2025
Self-aligned interconnect structures and methods of fabrication
INTEL CORP0 citations51
US11973143B2Apr 30, 2024
Source or drain structures for germanium N-channel devices
INTEL CORP0 citations50