Inventor
YANG SANG-RYOL
KR12 patents
⚠️ This page may combine multiple inventors who share the name “YANG SANG-RYOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS7419888B2Sep 2, 2008
Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD71 citations97
US6962876B2Nov 8, 2005
Method for forming a low-k dielectric layer for a semiconductor device
SAMSUNG ELECTRONICS CO LTD77 citations96
US7510935B2Mar 31, 2009
Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device
SAMSUNG ELECTRONICS CO LTD26 citations92
US7723755B2May 25, 2010
Semiconductor having buried word line cell structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US8970039B2Mar 3, 2015
Integrated circuit devices including electrode support structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US7951671B2May 31, 2011
Method of fabricating non-volatile memory device having separate charge trap patterns
SAMSUNG ELECTRONICS CO LTD6 citations62
US7759192B2Jul 20, 2010
Semiconductor device including capacitor and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations51