P

Inventor

HOLZ JUERGEN

DE23 patents
⚠️ This page may combine multiple inventors who share the name “HOLZ JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

15 patents
US7528453B2May 5, 2009

Field effect transistor with local source/drain insulation and associated method of production

INFINEON TECHNOLOGIES AG26 citations92
US6762066B2Jul 13, 2004

Method for fabricating a semiconductor structure using a protective layer, and semiconductor structure

INFINEON TECHNOLOGIES AG24 citations92
US7875977B2Jan 25, 2011

Barrier layers for conductive features

INFINEON TECHNOLOGIES AG9 citations84
US7759768B2Jul 20, 2010

Integrated circuit with intergrated capacitor and methods for making same

INFINEON TECHNOLOGIES AG17 citations84
US7545016B2Jun 9, 2009

Integrated layer stack arrangement, optical sensor and method for producing an integrated layer stack arrangement

INFINEON TECHNOLOGIES AG10 citations84
US7285490B2Oct 23, 2007

Method for the producing an integrated circuit bar arrangement, in particular comprising a capacitor assembly, in addition to an integrated circuit arrangement

INFINEON TECHNOLOGIES AG13 citations84
US7274060B2Sep 25, 2007

Memory cell array and method of forming the same

INFINEON TECHNOLOGIES AG16 citations84
US7449409B2Nov 11, 2008

Barrier layer for conductive features

INFINEON TECHNOLOGIES AG8 citations74
US7824993B2Nov 2, 2010

Field-effect transistor with local source/drain insulation and associated method of production

INFINEON TECHNOLOGIES AG7 citations73
US7005337B2Feb 28, 2006

Method for a parallel production of an MOS transistor and a bipolar transistor

INFINEON TECHNOLOGIES AG6 citations72
US9219063B2Dec 22, 2015

Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor

INFINEON TECHNOLOGIES AG2 citations63
US7763519B2Jul 27, 2010

Method for fabricating an interconnect arrangement with increased capacitive coupling and associated interconnect arrangement

INFINEON TECHNOLOGIES AG4 citations63
US7018884B2Mar 28, 2006

Method for a parallel production of an MOS transistor and a bipolar transistor

INFINEON TECHNOLOGIES AG4 citations61
US7622374B2Nov 24, 2009

Method of fabricating an integrated circuit

INFINEON TECHNOLOGIES AG0 citations52
US7015567B2Mar 21, 2006

Method for fabricating a semiconductor structure using a protective layer, and semiconductor structure

INFINEON TECHNOLOGIES AG0 citations52

HOLZ JUERGEN

3 patents

OSRAM OPTO SEMICONDUCTORS GMBH

2 patents

SAAD STEFAN

1 patent

QIMONDA AG

1 patent

OSRAM OLED GMBH

1 patent