Inventor
HOLZ JUERGEN
DE23 patents
⚠️ This page may combine multiple inventors who share the name “HOLZ JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
15 patentsUS7528453B2May 5, 2009
Field effect transistor with local source/drain insulation and associated method of production
INFINEON TECHNOLOGIES AG26 citations92
US6762066B2Jul 13, 2004
Method for fabricating a semiconductor structure using a protective layer, and semiconductor structure
INFINEON TECHNOLOGIES AG24 citations92
US7875977B2Jan 25, 2011
Barrier layers for conductive features
INFINEON TECHNOLOGIES AG9 citations84
US7759768B2Jul 20, 2010
Integrated circuit with intergrated capacitor and methods for making same
INFINEON TECHNOLOGIES AG17 citations84
US7545016B2Jun 9, 2009
Integrated layer stack arrangement, optical sensor and method for producing an integrated layer stack arrangement
INFINEON TECHNOLOGIES AG10 citations84
US7285490B2Oct 23, 2007
Method for the producing an integrated circuit bar arrangement, in particular comprising a capacitor assembly, in addition to an integrated circuit arrangement
INFINEON TECHNOLOGIES AG13 citations84
US7274060B2Sep 25, 2007
Memory cell array and method of forming the same
INFINEON TECHNOLOGIES AG16 citations84
US7449409B2Nov 11, 2008
Barrier layer for conductive features
INFINEON TECHNOLOGIES AG8 citations74
US7824993B2Nov 2, 2010
Field-effect transistor with local source/drain insulation and associated method of production
INFINEON TECHNOLOGIES AG7 citations73
US7005337B2Feb 28, 2006
Method for a parallel production of an MOS transistor and a bipolar transistor
INFINEON TECHNOLOGIES AG6 citations72
US9219063B2Dec 22, 2015
Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
INFINEON TECHNOLOGIES AG2 citations63
US7763519B2Jul 27, 2010
Method for fabricating an interconnect arrangement with increased capacitive coupling and associated interconnect arrangement
INFINEON TECHNOLOGIES AG4 citations63
US7018884B2Mar 28, 2006
Method for a parallel production of an MOS transistor and a bipolar transistor
INFINEON TECHNOLOGIES AG4 citations61
US7622374B2Nov 24, 2009
Method of fabricating an integrated circuit
INFINEON TECHNOLOGIES AG0 citations52
US7015567B2Mar 21, 2006
Method for fabricating a semiconductor structure using a protective layer, and semiconductor structure
INFINEON TECHNOLOGIES AG0 citations52
HOLZ JUERGEN
3 patentsUS8629500B2Jan 14, 2014
Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
HOLZ JUERGEN12 citations82
US8946617B2Feb 3, 2015
Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage
HOLZ JUERGEN2 citations57
US9240462B2Jan 19, 2016
Field-effect transistor with local source/drain insulation and associated method of production
HOLZ JUERGEN0 citations50
OSRAM OPTO SEMICONDUCTORS GMBH
2 patentsUS9991428B2Jun 5, 2018
Optoelectronic component and method for the production thereof
OSRAM OPTO SEMICONDUCTORS GMBH0 citations52
US10299341B2May 21, 2019
Lighting device, lighting arrangement comprising lighting device and method for operating a lighting device
OSRAM OPTO SEMICONDUCTORS GMBH0 citations50