Inventor
LU YONG-YAN
TW15 patents
Patents
15 patentsUS9607838B1Mar 28, 2017
Enhanced channel strain to reduce contact resistance in NMOS FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD25 citations94
US10515966B2Dec 24, 2019
Enhanced channel strain to reduce contact resistance in NMOS FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10056383B2Aug 21, 2018
Enhanced channel strain to reduce contact resistance in NMOS FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10916546B2Feb 9, 2021
Enhanced channel strain to reduce contact resistance in NMOS FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10797052B2Oct 6, 2020
Method and structure for FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12021082B2Jun 25, 2024
Enhanced channel strain to reduce contact resistance in NMOS FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11574907B2Feb 7, 2023
Enhanced channel strain to reduce contact resistance in NMOS FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11489054B2Nov 1, 2022
Raised epitaxial LDD in MuGFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855089B2Dec 26, 2023
Method and structure for FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11569230B2Jan 31, 2023
Method and structure for FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10964815B2Mar 30, 2021
CMOS finFET with doped spacers and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10840346B2Nov 17, 2020
Raised epitaxial LDD in MuGFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10516024B2Dec 24, 2019
Raised epitaxial LDD in MuGFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10157924B2Dec 18, 2018
Method and structure for FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9553172B2Jan 24, 2017
Method and structure for FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51