Inventor
JIN GYO-YOUNG
KR26 patents
⚠️ This page may combine multiple inventors who share the name “JIN GYO-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS6683364B2Jan 27, 2004
Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD118 citations98
US7223649B2May 29, 2007
Method of fabricating transistor of DRAM semiconductor device
SAMSUNG ELECTRONICS CO LTD59 citations97
US7056781B2Jun 6, 2006
Method of forming fin field effect transistor
SAMSUNG ELECTRONICS CO LTD51 citations92
US6642125B2Nov 4, 2003
Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same
SAMSUNG ELECTRONICS CO LTD37 citations92
US6194309B1Feb 27, 2001
Method for forming contact
SAMSUNG ELECTRONICS CO LTD48 citations92
US7015106B2Mar 21, 2006
Double gate field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD35 citations91
US7622778B2Nov 24, 2009
Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void
SAMSUNG ELECTRONICS CO LTD13 citations84
US7307008B2Dec 11, 2007
Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole
SAMSUNG ELECTRONICS CO LTD7 citations74
US6875649B2Apr 5, 2005
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area
SAMSUNG ELECTRONICS CO LTD5 citations74
US6974752B2Dec 13, 2005
Methods of fabricating integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD5 citations73
US7288823B2Oct 30, 2007
Double gate field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US9349724B2May 24, 2016
Semiconductor device having capacitors
SAMSUNG ELECTRONICS CO LTD6 citations70
US7265011B2Sep 4, 2007
Method of manufacturing a transistor
SAMSUNG ELECTRONICS CO LTD6 citations63
US7144798B2Dec 5, 2006
Semiconductor memory devices having extending contact pads and related methods
SAMSUNG ELECTRONICS CO LTD4 citations63
US7737512B2Jun 15, 2010
Integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD2 citations62
US7329927B2Feb 12, 2008
Integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD1 citations62
US8785998B2Jul 22, 2014
Semiconductor device having vertical channel transistor and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US8362536B2Jan 29, 2013
Semiconductor device having vertical channel transistor and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7833864B2Nov 16, 2010
Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US7465988B2Dec 16, 2008
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7297596B2Nov 20, 2007
Method of manufacturing a semiconductor device having a switching function
SAMSUNG ELECTRONICS CO LTD0 citations51