Inventor
YUN KYUNGHWA
KR15 patents
Patents
15 patentsUS11282827B2Mar 22, 2022
Nonvolatile memory device having stacked structure with spaced apart conductive layers
SAMSUNG ELECTRONICS CO LTD15 citations85
US11875855B2Jan 16, 2024
Non-volatile memory device including signal lines arranged at the same level as a common source line and a gate arranged at the same level as a ground selection line
SAMSUNG ELECTRONICS CO LTD2 citations72
US11355194B2Jun 7, 2022
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11348910B2May 31, 2022
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11289500B2Mar 29, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11211391B2Dec 28, 2021
Memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US11189634B2Nov 30, 2021
Non-volatile memory device including vertical pass transistors having a greater width in an area between a gate and a word line than a width of a channel structure in an area between a ground select line and the word line
SAMSUNG ELECTRONICS CO LTD5 citations72
US11302396B2Apr 12, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD4 citations71
US11289467B2Mar 29, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10763278B2Sep 1, 2020
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11723208B2Aug 8, 2023
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12336178B2Jun 17, 2025
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11430804B2Aug 30, 2022
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11430806B2Aug 30, 2022
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11087844B2Aug 10, 2021
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51