Inventor
KIM CHANHO
KR49 patents
⚠️ This page may combine multiple inventors who share the name “KIM CHANHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
44 patentsUS11721655B2Aug 8, 2023
Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device
SAMSUNG ELECTRONICS CO LTD6 citations85
US11282827B2Mar 22, 2022
Nonvolatile memory device having stacked structure with spaced apart conductive layers
SAMSUNG ELECTRONICS CO LTD15 citations85
US11823888B2Nov 21, 2023
Memory stack with pads connecting peripheral and memory circuits
SAMSUNG ELECTRONICS CO LTD5 citations74
US11664361B2May 30, 2023
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations74
US11270759B2Mar 8, 2022
Flash memory device and computing device including flash memory cells
SAMSUNG ELECTRONICS CO LTD5 citations73
US11264084B2Mar 1, 2022
Flash memory device and computing device including flash memory cells
SAMSUNG ELECTRONICS CO LTD4 citations73
US11233042B2Jan 25, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11233043B2Jan 25, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11114428B2Sep 7, 2021
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations73
US11875855B2Jan 16, 2024
Non-volatile memory device including signal lines arranged at the same level as a common source line and a gate arranged at the same level as a ground selection line
SAMSUNG ELECTRONICS CO LTD2 citations72
US11355194B2Jun 7, 2022
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11348910B2May 31, 2022
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11348848B2May 31, 2022
Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11342234B2May 24, 2022
Semiconductor device and nonvolatile memory device including crack detection structure
SAMSUNG ELECTRONICS CO LTD4 citations72
US11289500B2Mar 29, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11227860B2Jan 18, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11211391B2Dec 28, 2021
Memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US11189634B2Nov 30, 2021
Non-volatile memory device including vertical pass transistors having a greater width in an area between a gate and a word line than a width of a channel structure in an area between a ground select line and the word line
SAMSUNG ELECTRONICS CO LTD5 citations72
US11120843B2Sep 14, 2021
Memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10797066B2Oct 6, 2020
Memory devices with three-dimensional structure
SAMSUNG ELECTRONICS CO LTD5 citations72
US10763278B2Sep 1, 2020
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10546875B2Jan 28, 2020
Semiconductor memory device including a capacitor
SAMSUNG ELECTRONICS CO LTD3 citations71
US12354985B2Jul 8, 2025
Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12211830B2Jan 28, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12100442B2Sep 24, 2024
Flash memory device configured to be bonded to external semiconductor chip and computing device including flash memory device coupled to neural processor chip
SAMSUNG ELECTRONICS CO LTD0 citations62
US11723208B2Aug 8, 2023
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11699693B2Jul 11, 2023
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11621256B2Apr 4, 2023
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11456317B2Sep 27, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11227815B2Jan 18, 2022
Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11430802B2Aug 30, 2022
Nonvolatile memory device including erase transistors
SAMSUNG ELECTRONICS CO LTD0 citations52
US11411018B2Aug 9, 2022
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations52
US11329057B2May 10, 2022
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations52
US12336178B2Jun 17, 2025
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11430804B2Aug 30, 2022
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11430806B2Aug 30, 2022
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11282851B2Mar 22, 2022
Vertical capacitor structure and non-volatile memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11087844B2Aug 10, 2021
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11513730B2Nov 29, 2022
Memory device, memory system and autonomous driving apparatus
SAMSUNG ELECTRONICS CO LTD0 citations50
US11264082B2Mar 1, 2022
Memory device, memory system and autonomous driving apparatus
SAMSUNG ELECTRONICS CO LTD0 citations50
US11237983B2Feb 1, 2022
Memory device, method of operating memory device, and computer system including memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US11237955B2Feb 1, 2022
Memory device, method of operating memory device, and computer system including memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US8054708B2Nov 8, 2011
Power-on detector, operating method of power-on detector and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US10381078B2Aug 13, 2019
Semiconductor memories and methods for manufacturing same
SAMSUNG ELECTRONICS CO LTD0 citations39