P

Inventor

LIAO YIN-KAI

TW17 patents
⚠️ This page may combine multiple inventors who share the name “LIAO YIN-KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US12015099B2Jun 18, 2024

Semiconductor sensor and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11855237B2Dec 26, 2023

Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12495632B2Dec 9, 2025

Semiconductor image sensor and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12363969B2Jul 15, 2025

Passivation layer for epitaxial semiconductor process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166054B2Dec 10, 2024

Image sensor with passivation layer for dark current reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148853B2Nov 19, 2024

Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125934B2Oct 22, 2024

Method of manufacturing an optical sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908900B2Feb 20, 2024

Passivation layer for epitaxial semiconductor process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848345B2Dec 19, 2023

Image sensor with passivation layer for dark current reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11600737B2Mar 7, 2023

Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508817B2Nov 22, 2022

Passivation layer for epitaxial semiconductor process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901393B2Feb 13, 2024

Image sensor and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10269848B2Apr 23, 2019

Image sensor having enhanced backside illumination quantum efficiency

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9640582B2May 2, 2017

Method of manufacturing image sensor having enhanced backside illumination quantum efficiency

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12261190B2Mar 25, 2025

Vertically stacked light sensors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47

LIAO YIN-KAI

1 patent

HSIAO RU-SHANG

1 patent