Inventor

ITOH YASUO

JP83 patents

⚠️ This page may combine multiple inventors who share the name “ITOH YASUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ITOH YASUO

TOSHIBA KK

Non-volatile semiconductor memory device

Semiconductor memory device

Non-volatile semiconductor memory device

Electrically erasable programmable read-only memory with NAND cell structure

Internal voltage generating circuit capable of generating variable multi-level voltages

Semiconductor device

Non-volatile semiconductor memory device for storing multivalue data and readout/write-in method therefor

Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation

Non-volatile semiconductor memory device and memory system using the same

Non-volatile semiconductor memory device with an improved verify voltage generator

Variable potential generating circuit using current-scaling adding type D/A converter circuit

Non-volatile semiconductor memory device and memory system using the same

Electrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the same

Non-volatile semiconductor memory device and memory system using the same

Electrically erasable programmable read-only memory with NAND cell structure

Non-volatile semiconductor memory device and memory system using the same

High voltage generator circuit

Non-volatile semiconductor memory device and memory system using the same

Non-volatile semiconductor memory device and memory system using the same

Non-volatile semiconductor memory device with high voltage generator

NAND-cell type electrically erasable and programmable read-only memory with redundancy circuit

Electrically erasable programmable read-only memory with nand cell

Nand cell type programmable read-only memory with common control gate driver circuit

Electrically erasable programmable read-only memory with NAND cellstructure

Non-volatile semiconductor memory device and memory system using the same

Non-volatile semiconductor memory device and memory system using the same

Non-volatile semiconductor memory device and memory system using the same

Electrically erasable programmable read-only memory with threshold value controller for data programming

Variable potential generating circuit using current-scaling adding type D/A converter circuit in semiconductor memory device

Semiconductor memory device

High voltage generator circuit

Non-volatile semiconductor memory device and memory system using the same

Semiconductor memory device

Electrically erasable programmable read-only memory with threshold value controller for data programming

Non-volatile semiconductor memory device with verify mode for verifying data written to memory cells

Electrically erasable progammable read-only memory with nand cell blocks

Semiconductor memory address lines with varied interval contact holes

Non-volatile semiconductor memory device with nand type memory cell arrays

Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through

Nonvolatile semiconductor memory device with NAND cell structure

Non-volatile semiconductor memory device with voltage stabilizing electrode

Semiconductor memory devices

Semiconductor memory device with sense amplifiers

Non-volatile semiconductor memory device having verify function

NIPPON STEEL CORP

Apparatus of continuously casting a metal sheet

Method and apparatus of continuously casting a metal sheet

KABUSHIKI KASIHA TOSHIBA

Semiconductor memory system with dynamic random access memory cells

HOKURIKU PHARMACEUTICAL

6-Fluoro-1, 4-dihydro-4-oxo-7-substituted piperazinylquinoline-3-carboxylic acids and the method for preparing the same

TANAKA SHIGENORI

Cooling drum for continuous-casting machines for manufacturing thin metallic strip

VICTOR COMPANY OF JAPAN

Picture switching apparatus for executing a fade-out/fade-in processing