Inventor · disambiguated record
Pei-Ing Lee
Also filed as: LEE PEI-ING · LEE PEI-ING P · LEE PEI-ING PAUL
42 granted patents·4 pending applications·1,524 citations·filing 1989–2022
98Inventor score
Top patents by PatentIndex Score
46 records- 0197US4962058AProcess for fabricating multi-level integrated circuit wiring structure from a single metal depositIBM·Filed 1989·Granted Oct 9, 1990·215 cites·4 claims
- 0292US7316952B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 8, 2008·19 cites·16 claims
- 0392US6734066B2Method for fabricating split gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2002·Granted May 11, 2004·62 cites·33 claims
- 0492US4919750AEtching metal films with complexing chloride plasmaIBM·Filed 1989·Granted Apr 24, 1990·132 cites·7 claims
- 0591US5262354ARefractory metal capped low resistivity metal conductor lines and viasSIEMENS AG·Filed 1992·Granted Nov 16, 1993·187 cites·17 claims
- 0690US5834829AEnergy relieving crack stopIBM·Filed 1996·Granted Nov 10, 1998·140 cites·30 claims
- 0789US5034348AProcess for forming refractory metal silicide layers of different thicknesses in an integrated circuitIBM·Filed 1990·Granted Jul 23, 1991·129 cites·24 claims
- 0888US5608257AFuse element for effective laser blow in an integrated circuit deviceIBM·Filed 1995·Granted Mar 4, 1997·99 cites·20 claims
- 0987US5760475ARefractory metal-titanium nitride conductive structuresIBM·Filed 1994·Granted Jun 2, 1998·68 cites·3 claims
- 1086US7682902B2Memory structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 23, 2010·16 cites·8 claims
- 1183US7419882B2Alignment mark and alignment method for the fabrication of trench-capacitor dram devicesNANYA TECHNOLOGY CORP·Filed 2005·Granted Sep 2, 2008·13 cites·5 claims
- 1283US6448150B1Method for forming shallow trench isolation in the integrated circuitNANYA TECHNOLOGY CORP·Filed 1998·Granted Sep 10, 2002·71 cites·17 claims
- 1382US7316978B2Method for forming recessesNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 8, 2008·8 cites·20 claims
- 1480US5886320ALaser ablation with transmission matching for promoting energy coupling to a film stackIBM·Filed 1996·Granted Mar 23, 1999·61 cites·14 claims
- 1579US7679137B2Method for fabricating recessed gate MOS transistor deviceNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 16, 2010·8 cites·3 claims
- 1679US6368912B1Method of fabricating an isolation structure between a vertical transistor and a deep trench capacitorNANYA TECHNOLOGY CORP·Filed 2000·Granted Apr 9, 2002·27 cites·19 claims
- 1778US7541244B2Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Granted Jun 2, 2009·6 cites·6 claims
- 1877US7429509B2Method for forming a semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2005·Granted Sep 30, 2008·7 cites·26 claims
- 1976US7179748B1Method for forming recessesNANYA TECHNOLOGY CORP·Filed 2005·Granted Feb 20, 2007·5 cites·19 claims
- 2075US7316953B2Method for forming a recessed gate with word linesNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 8, 2008·6 cites·32 claims
- 2174US7932555B2Transistor structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Apr 26, 2011·4 cites·10 claims
- 2273US7795090B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Sep 14, 2010·3 cites·9 claims
- 2373US5401675AMethod of depositing conductors in high aspect ratio apertures using a collimatorFiled 1993·Granted Mar 28, 1995·49 cites·12 claims
- 2472US7723181B2Overlay alignment mark and alignment method for the fabrication of trench-capacitor dram devicesNANYA TECHNOLOGY CORP·Filed 2006·Granted May 25, 2010·6 cites·12 claims
- 2572US7563686B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2005·Granted Jul 21, 2009·4 cites·5 claims
- 2672US7358133B2Semiconductor device and method for making the sameNANYA TECHNOLOGY CORP·Filed 2005·Granted Apr 15, 2008·3 cites·11 claims
- 2770US6117726AMethod of making a trench capacitorNANYA TECHNOLOGY CORP·Filed 1999·Granted Sep 12, 2000·27 cites·27 claims
- 2868US7642590B2Semiconductor device and method for making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Jan 5, 2010·2 cites·8 claims
- 2968US7446355B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Granted Nov 4, 2008·2 cites·3 claims
- 3067US5872390AFuse window with controlled fuse oxide thicknessIBM·Filed 1997·Granted Feb 16, 1999·35 cites·3 claims
- 3160US6100117AMethod for manufacturing DRAM having a redundancy circuit regionNANYA TECHNOLOGY CORP·Filed 1998·Granted Aug 8, 2000·27 cites·16 claims
- 3260US5798301AMethod of manufacturing metal interconnect structure for an integrated circuit with improved electromigration reliabilitySIEMENS AG·Filed 1997·Granted Aug 25, 1998·18 cites·9 claims
- 3359US6403483B1Shallow trench isolation having an etching stop layer and method for fabricating sameNANYA TECHNOLOGY CORP·Filed 2000·Granted Jun 11, 2002·9 cites·12 claims
- 3457US12191274B2Nano-twinned structure on metallic thin film surface and method for forming the sameAG MATERIALS TECH CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·5 claims
- 3557US6211006B1Method of forming a trench-type capacitorNANYA TECHNOLOGY CORP·Filed 1999·Granted Apr 3, 2001·15 cites·12 claims
- 3657US2022388092A1Methods for forming bonding structuresUNIV NAT TAIWAN·Filed 2022·Application pending·0 cites
- 3756US5641992AMetal interconnect structure for an integrated circuit with improved electromigration reliabilitySIEMENS COMP INC·Filed 1995·Granted Jun 24, 1997·15 cites·3 claims
- 3855US2023057312A1Metallic nano-twinned thin film structure and method for forming the sameAG MATERIALS TECH CO LTD·Filed 2021·Application pending·0 cites
- 3953US5229257AProcess for forming multi-level coplanar conductor/insulator films employing photosensitive polymide polymer compositionsIBM·Filed 1990·Granted Jul 20, 1993·22 cites·11 claims
- 4051US7622770B2Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Nov 24, 2009·0 cites·4 claims
- 4150US7592233B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2007·Granted Sep 22, 2009·0 cites·9 claims
- 4249US7005698B2Split gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Feb 28, 2006·3 cites·21 claims
- 4346US8044449B2Memory device with a length-controllable channelNANYA TECHNOLOGY CORP·Filed 2008·Granted Oct 25, 2011·0 cites·4 claims
- 4443US6794270B2Method for shallow trench isolation fabrication and partial oxide layer removalNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 21, 2004·1 cites·14 claims
- 4540US2007190712A1Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
- 4624US2002005560A1Shallow trench isolation having an etching stop layer and method for fabricating sameFiled 1998·Application pending·0 cites
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