Inventor
KIM WAN DON
KR57 patents
⚠️ This page may combine multiple inventors who share the name “KIM WAN DON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
45 patentsUS6580111B2Jun 17, 2003
Metal-insulator-metal capacitor
SAMSUNG ELECTRONICS CO LTD77 citations98
US6500763B2Dec 31, 2002
Method for manufacturing an electrode of a capacitor
SAMSUNG ELECTRONICS CO LTD72 citations96
US7018933B2Mar 28, 2006
Method of forming a metal-insulator-metal capacitor
SAMSUNG ELECTRONICS CO LTD30 citations93
US6815221B2Nov 9, 2004
Method for manufacturing capacitor of semiconductor memory device controlling thermal budget
SAMSUNG ELECTRONICS CO LTD23 citations92
US6677217B2Jan 13, 2004
Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps
SAMSUNG ELECTRONICS CO LTD24 citations92
US6090704AJul 18, 2000
Method for fabricating a high dielectric capacitor
SAMSUNG ELECTRONICS CO LTD27 citations92
US9142558B2Sep 22, 2015
Semiconductor device having supporter and method of forming the same
SAMSUNG ELECTRONICS CO LTD20 citations91
US10734280B2Aug 4, 2020
Integrated circuit devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations85
US7172946B2Feb 6, 2007
Methods for forming semiconductor devices including thermal processing
SAMSUNG ELECTRONICS CO LTD10 citations84
US6613629B2Sep 2, 2003
Methods for manufacturing storage nodes of stacked capacitors
SAMSUNG ELECTRONICS CO LTD16 citations84
US10312340B2Jun 4, 2019
Semiconductor devices having work function metal films and tuning materials
SAMSUNG ELECTRONICS CO LTD6 citations83
US9806075B2Oct 31, 2017
Integrated circuit devices having a Fin-type active region and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US9553141B2Jan 24, 2017
Semiconductor device having supporter
SAMSUNG ELECTRONICS CO LTD10 citations83
US7049232B2May 23, 2006
Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6982205B2Jan 3, 2006
Method and manufacturing a semiconductor device having a metal-insulator-metal capacitor
SAMSUNG ELECTRONICS CO LTD7 citations74
US6762091B2Jul 13, 2004
Methods for manufacturing semiconductor devices having a metal layer
SAMSUNG ELECTRONICS CO LTD7 citations74
US6743678B2Jun 1, 2004
Methods for manufacturing semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD11 citations74
US12014988B2Jun 18, 2024
Semiconductor device having a graphene film and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD2 citations73
US11282939B2Mar 22, 2022
Semiconductor device including work function adjusting metal gate structure
SAMSUNG ELECTRONICS CO LTD4 citations73
US11799004B2Oct 24, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations72
US11296196B2Apr 5, 2022
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US10593670B2Mar 17, 2020
Methods of manufacturing integrated circuit devices having a fin-type active region
SAMSUNG ELECTRONICS CO LTD3 citations72
US10529817B2Jan 7, 2020
Semiconductor devices having multi-threshold voltage
SAMSUNG ELECTRONICS CO LTD3 citations72
US10879392B2Dec 29, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations71
US10115797B2Oct 30, 2018
Finfet semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US7700454B2Apr 20, 2010
Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
SAMSUNG ELECTRONICS CO LTD4 citations63
US7091102B2Aug 15, 2006
Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby
SAMSUNG ELECTRONICS CO LTD4 citations63
US7034350B2Apr 25, 2006
Capacitors including a cavity containing a buried layer
SAMSUNG ELECTRONICS CO LTD3 citations63
US6946341B2Sep 20, 2005
Methods for manufacturing storage nodes of stacked capacitors
SAMSUNG ELECTRONICS CO LTD6 citations63
US6884673B2Apr 26, 2005
Methods of forming integrated circuit devices having metal-insulator-metal (MIM) capacitor
SAMSUNG ELECTRONICS CO LTD6 citations63
US6806139B2Oct 19, 2004
Method of fabricating a MIM capacitor using etchback
SAMSUNG ELECTRONICS CO LTD4 citations63
US12046556B2Jul 23, 2024
Semiconductor devices having highly integrated active and power distribution regions therein
SAMSUNG ELECTRONICS CO LTD0 citations62
US11967630B2Apr 23, 2024
Semiconductor device including work function adjusting metal gate structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US10566433B2Feb 18, 2020
Semiconductor devices having transistors with different work function layers
SAMSUNG ELECTRONICS CO LTD1 citations62
US6472319B2Oct 29, 2002
Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment
SAMSUNG ELECTRONICS CO LTD6 citations62
US12575148B2Mar 10, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12087833B2Sep 10, 2024
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11949012B2Apr 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US11854979B2Dec 26, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7842581B2Nov 30, 2010
Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers
SAMSUNG ELECTRONICS CO LTD1 citations52
US7781819B2Aug 24, 2010
Semiconductor devices having a contact plug and fabrication methods thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US7416904B2Aug 26, 2008
Method for forming dielectric layer of capacitor
SAMSUNG ELECTRONICS CO LTD0 citations52
US7335550B2Feb 26, 2008
Methods for forming semiconductor devices including thermal processing
SAMSUNG ELECTRONICS CO LTD0 citations52
US6893501B2May 17, 2005
Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US12388022B2Aug 12, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
KIM WAN-DON
3 patentsUS9780183B2Oct 3, 2017
Semiconductor devices having work function metal films and tuning materials
KIM WAN-DON12 citations82
US8643075B2Feb 4, 2014
Semiconductor device having glue layer and supporter
KIM WAN-DON5 citations71
US9153499B2Oct 6, 2015
Semiconductor device having metal plug and method of forming the same
KIM WAN-DON4 citations70
KIM YOUN-SOO
1 patentSON HYEOK-JUN
1 patentShowing the top 50 of 57 patents by PatentIndex Score.