Inventor

HAZAMA HIROAKI

JP49 patents

⚠️ This page may combine multiple inventors who share the name “HAZAMA HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAZAMA HIROAKI

TOSHIBA KK

Nonvolatile semiconductor memory device having configuration of NAND strings with dummy memory cells adjacent to select transistors

Nonvolatile semiconductor memory device capable of storing multi-value data of more than one bit in a memory cell

Multi-level nonvolatile semiconductor memory device having improved programming level and read/write multi-level data circuits

Nonvolatile memory cell having gate insulation film with carrier traps therein

Semiconductor device with monocrystalline gate insulating film

Semiconductor device and method of fabricating the same

Semiconductor device with trench isolation between two regions having different gate insulating films

Flash memory having memory section and peripheral circuit section

Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell

Nonvolatile semiconductor memory device having trench-type isolation region, and method of fabricating the same

Semiconductor device

Nonvolatile semiconductor memory device covered with insulating film which is hard for an oxidizing agent to pass therethrough

Manufacturing method of semiconductor device with filling insulating film into trench

Semiconductor device having serially connected memory cell transistors provided between two current terminals

Exposure mask and method and apparatus for manufacturing the same

Reticle

Exposure mask and method and apparatus for manufacturing the same

Exposure mask and method and apparatus for manufacturing the same

Method of fabricating a reticle

Method of manufacturing semiconductor devices with alleviated electric field concentration at gate edge portions

NAND type memory with dummy cells adjacent to select transistors being biased at different voltage during data erase

Semiconductor device and method of manufacturing the same

Nonvolatile semiconductor memory device

Superconductor device and method of manufacturing the same

Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory

Flash memory having memory section and peripheral circuit section

Flash memory having memory section and peripheral circuit section

Semiconductor memory device having a multi-layered interlayer insulation consisting of deuterium and nitride

Method of manufacturing a semiconductor device with trench isolation between two regions having different gate insulating films

Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell

Manufacturing method of semiconductor device with filling insulating film into trench

Nonvolatile semiconductor memory device and method for manufacturing the same

Nonvolatile semiconductor memory device and method for manufacturing the same

Nonvolatile semiconductor memory device and method for manufacturing the same

Reticle and method of fabricating reticle

Method of exposing light in a method of fabricating a reticle

Nonvolatile semiconductor memory device and operation method of the same

Superconductor device and method of manufacturing the same

Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell

Method of fabricating semiconductor device

Method of fabricating semiconductor device

Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films

Nonvolatile semiconductor storage device

Nonvolatile semiconductor memory device and manufacturing method therefor

HAZAMA HIROAKI

Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell

Nonvolatile semiconductor storage device and method of erase verifying the same

Nonvolatile semiconductor memory device, method of fabricating the nonvolatile semiconductor memory device and process of writing data on the nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell

Nonvolatile semiconductor memory device, method of fabricating the nonvolatile semiconductor memory device and process of writing data on the nonvolatile semiconductor memory device